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We study experimentally and theoretically the in-plane magnetic field dependence of the coupling between dots forming a vertically stacked double dot molecule. The InAsP molecule is grown epitaxially in an InP nanowire and interrogated optically at millikelvin temperatures. The strength of interdot tunneling, leading to the formation of the bonding-antibonding pair of molecular orbitals, is investigated by adjusting the sample geometry. For specific geometries, we show that the interdot coupling can be controlled in-situ using a magnetic field-mediated redistribution of interdot coupling strengths. This is an important milestone in the development of qubits required in future quantum information technologies.
We report results on the control of barrier transparency in InAs/InP nanowire quantum dots via the electrostatic control of the device electron states. Recent works demonstrated that barrier transparency in this class of devices displays a general tr
The optical properties of single InAsP/InP quantum dots are investigated by spectrally-resolved and time-resolved photoluminescence measurements as a function of excitation power. In the short-wavelength region (below 1.45 $mu$m), the spectra display
We have investigated the optical properties of a single InAsP quantum dot embedded in a standing InP nanowire. A regular array of nanowires was fabricated by epitaxial growth and electron-beam patterning. The elongation of transverse exciton spin rel
We report on the site-selected growth of bright single InAsP quantum dots embedded within InP photonic nanowire waveguides emitting at telecom wavelengths. We demonstrate a dramatic dependence of the emission rate on both the emission wavelength and
Transport properties of holes in InP nanowires were calculated considering electron-phonon interaction via deformation potentials, the effect of temperature and strain fields. Using molecular dynamics, we simulate nanowire structures, LO-phonon energ