ترغب بنشر مسار تعليمي؟ اضغط هنا

Theory of electrical rectification in a molecular monolayer

40   0   0.0 ( 0 )
 نشر من قبل Christophe Krzeminski
 تاريخ النشر 2011
  مجال البحث فيزياء
والبحث باللغة English




اسأل ChatGPT حول البحث

The current-voltage characteristics in Langmuir-Blodgett monolayers of gamma-hexadecylquinolinium tricyanoquinodimethanide (C16H33Q-3CNQ) sandwiched between Al or Au electrodes is calculated, combining ab initio and self-consistent tight binding techniques. The rectification current depends on the position of the LUMO and HOMO relative to the Fermi levels of the electrodes as in the Aviram-Ratner mechanism, but also on the profile of the electrostatic potential which is extremely sensitive to where the electroactive part of the molecule lies in the monolayer. This second effect can produce rectification in the direction opposite to the Aviram-Ratner prediction.

قيم البحث

اقرأ أيضاً

SnSe monolayer with orthorhombic Pnma GeS structure is an important two-dimensional (2D) indirect band gap material at room temperature. Based on first-principles density functional theory calculations, we present systematic studies on the electronic and magnetic properties of X (X = Ga, In, As, Sb) atoms doped SnSe monolayer. The calculated electronic structures show that Ga-doped system maintains semiconducting property while In-doped SnSe monolayer is half-metal. The As- and Sb- doped SnSe systems present the characteristics of n-type semiconductor. Moreover, all considered substitutional doping cases induce magnetic ground states with the magnetic moment of 1{mu}B. In addition, the calculated formation energies also show that four types of doped systems are thermodynamic stable. These results provide a new route for the potential applications of doped SnSe monolayer in 2D photoelectronic and magnetic semiconductor devices.
By including a fraction of exact exchange (EXX), hybrid functionals reduce the self-interaction error in semi-local density functional theory (DFT), and thereby furnish a more accurate and reliable description of the electronic structure in systems t hroughout biology, chemistry, physics, and materials science. However, the high computational cost associated with the evaluation of all required EXX quantities has limited the applicability of hybrid DFT in the treatment of large molecules and complex condensed-phase materials. To overcome this limitation, we have devised a linear-scaling yet formally exact approach that utilizes a local representation of the occupied orbitals (e.g., maximally localized Wannier functions, MLWFs) to exploit the sparsity in the real-space evaluation of the quantum mechanical exchange interaction in finite-gap systems. In this work, we present a detailed description of the theoretical and algorithmic advances required to perform MLWF-based ab initio molecular dynamics (AIMD) simulations of large-scale condensed-phase systems at the hybrid DFT level. We provide a comprehensive description of the exx algorithm, which is currently implemented in the Quantum ESPRESSO program and employs a hybrid MPI/OpenMP parallelization scheme to efficiently utilize high-performance computing (HPC) resources. This is followed by a critical assessment of the accuracy and parallel performance of this approach when performing AIMD simulations of liquid water in the canonical ensemble. With access to HPC resources, we demonstrate that exx enables hybrid DFT based AIMD simulations of condensed-phase systems containing 500-1000 atoms with a walltime cost that is comparable to semi-local DFT. In doing so, exx takes us closer to routinely performing AIMD simulations of large-scale condensed-phase systems for sufficiently long timescales at the hybrid DFT level of theory.
113 - Zewen Wu , Jin Yu , Shengjun Yuan 2019
Two-dimensional CrI3 has attracted much attention as it is reported to be a ferromagnetic semiconductor with the Curie temperature around 45K. By performing first-principles calculations, we find that the magnetic ground state of CrI3 is variable und er biaxial strain. Our theoretical investigations show that the ground state of monolayer CrI3 is ferromagnetic under compression, but becomes antiferromagnetic under tension. Particularly, the transition occurs under a feasible in-plane strain around 1.8%. Accompanied by the transition of the magnetic ground state, it undergoes a transition from magnetic-metal to half-metal to half-semiconductor to spin-relevant semiconductor when strain varies from -15% to 10%. We attribute these transitions to the variation of the d-orbitals of Cr atoms and the p-orbitals of I atoms. Generally, we report a series of magnetic and electronic phase transition in strained CrI3, which will help both theoretical and experimental researchers for further understanding of the tunable electronic and magnetic properties of CrI3 and their analogous.
362 - Ryan A. Beck 2021
Chromium iodide monolayers, which have different magnetic properties in comparison to the bulk chromium iodide, have been shown to form skyrmionic states in applied electromagnetic fields or in Janus-layer devices. In this work, we demonstrate that s pin-canted solutions can be induced into monolayer chromium iodide by select substitution of iodide atoms with isovalent impurities. Several concentrations and spatial configurations of halide substitutional defects are selected to probe the coupling between the local defect-induced geometric distortions and orientation of chromium magnetic moments. This work provides atomic-level insight into how atomically precise strain-engineering can be used to create and control complex magnetic patterns in chromium iodide layers and lays out the foundation for investigating the field- and geometric-dependent magnetic properties in similar two-dimensional materials.
Phase change memory (PCM) is an emerging data storage technology, however its programming is thermal in nature and typically not energy-efficient. Here we reduce the switching power of PCM through the combined approaches of filamentary contacts and t hermal confinement. The filamentary contact is formed through an oxidized TiN layer on the bottom electrode, and thermal confinement is achieved using a monolayer semiconductor interface, three-atom thick MoS2. The former reduces the switching volume of the phase change material and yields a 70% reduction in reset current versus typical 150 nm diameter mushroom cells. The enhanced thermal confinement achieved with the ultra-thin (~6 {AA}) MoS2 yields an additional 30% reduction in switching current and power. We also use detailed simulations to show that further tailoring the electrical and thermal interfaces of such PCM cells toward their fundamental limits could lead up to a six-fold benefit in power efficiency.
التعليقات
جاري جلب التعليقات جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
mircosoft-partner

هل ترغب بارسال اشعارات عن اخر التحديثات في شمرا-اكاديميا