ترغب بنشر مسار تعليمي؟ اضغط هنا

First-principles study on atomic configuration of electron-beam irradiated C$_{60}$ clusters

88   0   0.0 ( 0 )
 نشر من قبل Tomoya Ono
 تاريخ النشر 2011
  مجال البحث فيزياء
والبحث باللغة English




اسأل ChatGPT حول البحث

A theoretical study proposes the atomic configuration of electron-beam irradiated C$_{60}$ thin films. We examined the electronic structure and electron-transport properties of the C$_{60}$ clusters using density-functional calculations and found that a rhombohedral C$_{60}$ polymer with $sp^3$-bonded dumbbell-shaped connections at the molecule junction is a semiconductor with a narrow band gap while the polymer changes to exhibit metallic behavior by forming $sp^2$-bonded peanut-shaped connections. Conductance below the Fermi level increases and the peak of the conductance spectrum arising from the $t_{u1}$ states of a C$_{60}$ molecule becomes obscure after the connections are rearranged. The present rohmbohedral film, including the [2+2] four-membered rings and peanut-shaped connections, is a candidate to represent the structure of the metallic C$_{60}$ polymer at the initial stage of electron-beam irradiation.


قيم البحث

اقرأ أيضاً

Interactions of two-dimensional MXene sheets and electron beam of (scanning) transmission electron microscope are studied via first-principles calculations. We simulated the knock-on displacement threshold for Ti$_3$C$_2$ MXene sheet via ab initio mo lecular dynamics simulations and for five other MXenes (Ti$_2$C, Ti$_2$N, Nb$_2$C, Mo$_2$TiC$_2$, and Ti$_3$CN) approximately from defect formation energies. We evaluated sputtering cross section and sputtering rates, and based on those the evolution of the surface composition. We find that at the exit surface and for low TEM energies H and F sputter at equal rates, but at high TEM energies the F is sputtered most strongly. In the enter surface, H sputtering dominates. The results were found to be largely similar for all studied MXenes, and although the displacement thresholds varied between the different metal atoms the thresholds were always too high to lead to significant sputtering of the metal atoms. We simulated electron microscope images at the successive stages of sputtering, and found that while it is likely difficult to identify surface groups based on the spot intensities, the local contraction of lattice around O groups should be observable. We also studied MXenes encapsulated with graphene and found them to provide efficient protection from the knock-on damage for all surface group atoms except H.
The formation possibility of a new (Zr0.25Nb0.25Ti0.25V0.25)C high-entropy ceramic (ZHC-1) was first analyzed by the first-principles calculations and thermodynamical analysis and then it was successfully fabricated by hot pressing sintering techniqu e. The first-principles calculation results showed that the mixing enthalpy of ZHC-1 was 5.526 kJ/mol and the mixing entropy of ZHC-1 was in the range of 0.693R-1.040R. The thermodynamical analysis results showed that ZHC-1 was thermodynamically stable above 959 K owing to its negative mixing Gibbs free energy. The experimental results showed that the as-prepared ZHC-1 (95.1% relative density) possessed a single rock-salt crystal structure, some interesting nanoplate-like structures and high compositional uniformity from nanoscale to microscale. By taking advantage of these unique features, compared with the initial metal carbides (ZrC, NbC, TiC and VC), it showed a relatively low thermal conductivity of 15.3 + - 0.3 W/(m.K) at room temperature, which was due to the presence of solid solution effects, nanoplates and porosity. Meanwhile, it exhibited the relatively high nanohardness of 30.3 + - 0.7 GPa and elastic modulus of 460.4 + - 19.2 GPa and the higher fracture toughness of 4.7 + - 0.5 MPa.m1/2, which were attributed to the solid solution strengthening mechanism and nanoplate pullout and microcrack deflection toughening mechanism.
Rare-earth nickelates R$^{3+}$Ni$^{3+}$O$_3$ (R=Lu-Pr, Y) show a striking metal-insulator transition in their bulk phase whose temperature can be tuned by the rare-earth radius. These compounds are also the parent phases of the newly identified infin ite layer RNiO2 superconductors. Although intensive theoretical works have been devoted to understand the origin of the metal-insulator transition in the bulk, there have only been a few studies on the role of hole and electron doping by rare-earth substitutions in RNiO$_3$ materials. Using first-principles calculations based on density functional theory (DFT) we study the effect of hole and electron doping in a prototypical nickelate SmNiO3. We perform calculations without Hubbard-like U potential on Ni 3d levels but with a meta-GGA better amending self-interaction errors. We find that at low doping, polarons form with intermediate localized states in the band gap resulting in a semiconducting behavior. At larger doping, the intermediate states spread more and more in the band gap until they merge either with the valence (hole doping) or the conduction (electron doping) band, ultimately resulting in a metallic state at 25% of R cation substitution. These results are reminiscent of experimental data available in the literature and demonstrate that DFT simulations without any empirical parameter are qualified for studying doping effects in correlated oxides and to explore the mechanisms underlying the superconducting phase of rare-earth nickelates.
The c(6x2) is a reconstruction of the SrTiO3(001) surface that is formed between 1050-1100oC in oxidizing annealing conditions. This work proposes a model for the atomic structure for the c(6x2) obtained through a combination of results from transmis sion electron diffraction, surface x-ray diffraction, direct methods analysis, computational combinational screening, and density functional theory. As it is formed at high temperatures, the surface is complex and can be described as a short-range ordered phase featuring microscopic domains composed of four main structural motifs. Additionally, non-periodic TiO2 units are present on the surface. Simulated scanning tunneling microscopy images based on the electronic structure calculations are consistent with experimental images.
134 - D. D. Fan , H. J. Liu , L. Cheng 2017
It is generally assumed in the thermoelectric community that the lattice thermal conductivity of a given material is independent of the electronic properties. This perspective is however questionable since the electron-phonon coupling could have cert ain effects on both the carrier and phonon transport, which in turn will affect the thermoelectric properties. Using SiGe compound as a prototypical example, we give an accurate prediction of the carrier relaxation time by considering scattering from all the phonon modes, as opposed to the simple deformation potential theory. It is found that the carrier relaxation time does not change much with the concentration, which is however not the case for the phonon transport where the lattice thermal conductivity can be significantly reduced by electron-phonon coupling at higher carrier concentration. As a consequence, the figure-of-merit of SiGe compound is obviously enhanced at optimized carrier concentration, and becomes more pronounced at elevated temperature.
التعليقات
جاري جلب التعليقات جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
mircosoft-partner

هل ترغب بارسال اشعارات عن اخر التحديثات في شمرا-اكاديميا