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We report techniques for the fabrication of multi-zone linear RF Paul traps that exploit the machinability and electrical conductivity of degenerate silicon. The approach was tested by trapping and laser cooling 24Mg+ ions in two trap geometries: a single-zone two-layer trap and a multi-zone surface-electrode trap. From the measured ion motional heating rate we determine an electric field spectral density at the ions position of approximately 1E-10 (V/m)^2/Hz at a frequency of 1.125 MHz when the ion lies 40 micron above the trap surface. One application of these devices is controlled manipulation of atomic ion qubits, the basis of one form of quantum information processing.
We propose the use of 2-dimensional Penning trap arrays as a scalable platform for quantum simulation and quantum computing with trapped atomic ions. This approach involves placing arrays of micro-structured electrodes defining static electric quadru
We experimentally demonstrate fast separation of a two-ion crystal in a microstructured segmented Paul trap. By the use of spectroscopic calibration routines for the electrostatic trap potentials, we achieve the required precise control of the ion tr
We present the design, fabrication, and experimental implementation of surface ion traps with Y-shaped junctions. The traps are designed to minimize the pseudopotential variations in the junction region at the symmetric intersection of three linear s
We have developed an trapped ion system for producing two-dimensional (2D) ion crystals for applications in scalable quantum computing, quantum simulations, and 2D crystal phase transition and defect studies. The trap is a modification of a Paul trap
The attributes of group-V-donor spins implanted in an isotopically purified $^{28}$Si crystal make them attractive qubits for large-scale quantum computer devices. Important features include long nuclear and electron spin lifetimes of $^{31}$P, hyper