اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدCharacterization of Prototype BTeV Silicon Pixel Sensors Before and After Irradiation
91
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
We report on measurements performed on silicon pixel sensor prototypes exposed to a 200 MeV proton beam at the Indiana University Cyclotron Facility. The sensors are of n+/n/p+ type with multi-guard ring structures on the p+-side and p-stop electrode isolation on the n+-side. Electrical characterization of the devices was performed before and after irradiation up to a proton fluence of 4E14 p/cm2. We tested pixel sensors fabricated from normal and oxygen-enriched silicon wafers and with two different p-stop isolation layouts: common p-stop and individual p-stop.
قيم البحث
اقرأ أيضاً
Pixelated silicon detectors are state-of-the-art technology to achieve precise tracking and vertexing at collider experiments, designed to accurately measure the hit position of incoming particles in high rate and radiation environments. The detector
requirements become extremely demanding for operation at the High-Luminosity LHC, where up to 200 interactions will overlap in the same bunch crossing on top of the process of interest. Additionally, fluences up to 2.3 10^16 cm^-2 1 MeV neutron equivalent at 3.0 cm distance from the beam are expected for an integrated luminosity of 3000 fb^-1. In the last decades, the pixel pitch has constantly been reduced to cope with the experiments needs of achieving higher position resolution and maintaining low pixel occupancy per channel. The spatial resolution improves with a decreased pixel size but it degrades with radiation damage. Therefore, prototype sensor modules for the upgrade of the experiments at the HL-LHC need to be tested after being irradiated. This paper describes position resolution measurements on planar prototype sensors with 100x25 um^2 pixels for the CMS Phase-2 Upgrade. It reviews the dependence of the position resolution on the relative inclination angle between the incoming particle trajectory and the sensor, the charge threshold applied by the readout chip, and the bias voltage. A precision setup with three parallel planes of sensors has been used to investigate the performance of sensors irradiated to fluences up to F_eq = 3.6 10^15 cm-2. The measurements were performed with a 5 GeV electron beam. A spatial resolution of 3.2 +- 0.1 um is found for non-irradiated sensors, at the optimal angle for charge sharing. The resolution is 5.0 +/- 0.2 um for a proton-irradiated sensor at F_eq = 2.1 10^15 cm-2 and a neutron-irradiated sensor at F_eq = 3.6 10^15 cm^-2.
The silicon pixel vertex detector is a key element of the BTeV spectrometer. Sensors bump-bonded to prototype front-end devices were tested in a high energy pion beam at Fermilab. The spatial resolution and occupancies as a function of the pion incid
ent angle were measured for various sensor-readout combinations. The data are compared with predictions from our Monte Carlo simulation and very good agreement is found.
We study the radiation effects of the Low Gain Avalanche Detector (LGAD) sensors developed by the Institute of High Energy Physics (IHEP) and the Novel Device Laboratory (NDL) of Beijing Normal University in China. These new sensors have been irradia
ted at the China Institute of Atomic Energy (CIAE) using 100 MeV proton beam with five different fluences from 7$times10^{14}$ $n_{eq}/cm^2$ up to 4.5$times10^{15}$ $n_{eq}/cm^2$. The result shows the effective doping concentration in the gain layer decreases with the increase of irradiation fluence, as expected by the acceptor removal mechanism. By comparing data and model gives the acceptor removal coefficient $c_{A}$ = $(6.07pm0.70)times10^{-16}~cm^2$, which indicates the NDL sensor has fairly good radiation resistance.
The silicon pixel vertex detector is one of the key elements of the BTeV spectrometer. Detector prototypes were tested in a beam at Fermilab. We report here on the measured spatial resolution as a function of the incident angles for different sensor-
readout electronics combinations. We compare the results with predictions from our Monte Carlo simulation.
The energy dependence of the energy and position resolutions of the electromagnetic calorimeter prototype made of lead tungstate crystals produced in Bogoroditsk (Russia) and Shanghai (China) is presented. These measurementswere carried out at the Pr
otvino accelerator using a 1 to 45 GeV electron beam. The crystals were coupled to photomultiplier tubes. The dependence of energy and position resolutions on different factors as well as the measured electromagnetic shower lateral profile are presented.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
