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The relaxations of conductivity have been studied in the glassy regime of a strongly disordered two-dimensional electron system in Si after a temporary change of carrier density during the waiting time t_w. Two types of response have been observed: a) monotonic, where relaxations exhibit aging, i.e. dependence on history, determined by t_w and temperature; b) nonmonotonic, where a memory of the sample history is lost. The conditions that separate the two regimes have been also determined.
The relaxations of conductivity have been studied in a strongly disordered two-dimensional (2D) electron system in Si after excitation far from equilibrium by a rapid change of carrier density n_s at low temperatures T. The dramatic and precise depen
The relaxations of conductivity after a temporary change of carrier density n_s during the waiting time t_w have been studied in a strongly disordered two-dimensional electron system in Si. At low enough n_s < n_g (n_g - the glass transition density)
We study numerically the glass formation and depinning transition of a system of two-dimensional cluster-forming monodisperse particles in presence of pinning disorder. The pairwise interaction potential is nonmonotonic, and is motivated by the inter
Aging effects in the relaxations of conductivity of a two-dimensional electron system in Si have been studied as a function of carrier density. They reveal an abrupt change in the nature of the glassy phase at the metal-insulator transition (MIT): (a
Studies of low-frequency resistance noise show that the glassy freezing of the two-dimensional electron system (2DES) in Si in the vicinity of the metal-insulator transition (MIT) persists in parallel magnetic fields B of up to 9 T. At low B, both th