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In the fractional quantum Hall effect regime we measure diagonal ($rho_{xx}$) and Hall ($rho_{xy}$) magnetoresistivity tensor components of two-dimensional electron system (2DES) in gated GaAs/Al$_{x}$Ga$_{1-x}$As heterojunctions, together with capacitance between 2DES and the gate. We observe 1/3- and 2/3-fractional quantum Hall effect at rather low magnetic fields where corresponding fractional minima in the thermodynamical density of states have already disappeared manifesting complete suppression of the quasiparticle energy gaps.
The fractional quantum Hall effect (FQHE) stands as a quintessential manifestation of an interacting two-dimensional electron system. One of FQHEs most fundamental characteristics is the energy gap separating the incompressible ground state from its
We report observation of the fractional quantum Hall effect (FQHE) in high mobility multi-terminal graphene devices, fabricated on a single crystal boron nitride substrate. We observe an unexpected hierarchy in the emergent FQHE states that may be ex
The interplay between interaction and disorder-induced localization is of fundamental interest. This article addresses localization physics in the fractional quantum Hall state, where both interaction and disorder have nonperturbative consequences. W
We report on magnetotransport measurements of multi-terminal suspended graphene devices. Fully developed integer quantum Hall states appear in magnetic fields as low as 2 T. At higher fields the formation of longitudinal resistance minima and transve
Suppose a classical electron is confined to move in the $xy$ plane under the influence of a constant magnetic field in the positive $z$ direction. It then traverses a circular orbit with a fixed positive angular momentum $L_z$ with respect to the cen