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The polarity-dependent resistive-switching across metal-Pr0.7Ca0.3MnO3 interfaces is investigated. The data suggest that shallow defects in the interface dominate the switching. Their density and fluctuation, therefore, will ultimately limit the device size. While the defects generated/annihilated by the pulses and the associated carrier depletion seem to play the major role at lower defect density, the defect correlations and their associated hopping ranges appear to dominate at higher defect density. Therefore, the switching characteristics, especially the size-scalability, may be altered through interface treatments.
In this work, vertical tunnel field-effect transistors (v-TFETs) based on vertically stacked heretojunctions from 2D transition metal dichalcogenide (TMD) materials are studied by atomistic quantum transport simulations. The switching mechanism of v-
Films produced by assembling bare gold clusters well beyond the electrical percolation threshold show a resistive switching behavior whose investigation has started only recently. Here we address the challenge to charaterize the resistance of a nanog
Low temperature growth Pr0.7Ca0.3MnO3 (PCMO) thin film showed high performance in electric field induced resistance switching (RS). To understand the micro-mechanism of RS in Metal/PCMO/Metal devices, structure evolution of PCMO under external electr
The hysteretic and reversible polarity-dependent resistive switch driven by electric pulses is studied in both Ag/Pr0.7Ca0.3MnO3/YBa2Cu3O7 sandwiches and single-layer Pr0.7Ca0.3MnO3 strips. The data demonstrate that the switch takes place at the Ag-P
We report on resistive switching of memristive electrochemical metallization devices using 3D kinetic Monte Carlo simulations describing the transport of ions through a solid state electrolyte of an Ag/TiO$_{text{x}}$/Pt thin layer system. The ion tr