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تسجيل مستخدم جديدSubgap tunneling through channels of polarons and bipolarons in chain conductors
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We suggest a theory of internal coherent tunneling in the pseudogap region where the applied voltage is below the free electron gap. We consider quasi 1D systems where the gap is originated by a lattice dimerization like in polyacethylene, as well as low symmetry 1D semiconductors. Results may be applied to several types of conjugated polymers, to semiconducting nanotubes and to quantum wires of semiconductors. The approach may be generalized to tunneling in strongly correlated systems showing the pseudogap effect, like the family of High Tc materials in the undoped limit. We demonstrate the evolution of tunneling current-voltage characteristics from smearing the free electron gap down to threshold for tunneling of polarons and further down to the region of bi-electronic tunneling via bipolarons or kink pairs.
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We suggest a theory of internal coherent tunneling in the pseudogap region, when the applied voltage U is below the free electron gap 2Delta_0. We address quasi 1D systems, where the gap is originated by spontaneous lattice distortions of the Incomme
nsurate Charge Density Wave (ICDW) type. Results can be adjusted also to quasi-1D superconductors. The instanton approach allows to calculate the interchain tunneling current both in single electron (amplitude solitons, i.e. spinons) and bi-electron (phase slips) channels. Transition rates are governed by a dissipative dynamics originated by emission of gapless phase excitations in the course of the instanton process. We find that the single-electron tunneling is allowed below the nominal gap 2Delta_0 down to the true pair-breaking threshold at 2W_as<2Delta, where W_as=2Delta/pi is the amplitude soliton energy. Most importantly, the bi-electronic tunneling stretches down to U=0 (in the 1D regime). In both cases, the threshold behavior is given by power laws J (U-U_c)^beta, where the exponent beta v_F/u is large as the ratio of the Fermi velocity v_F and the phase one u. In the 2D or 3D ordered phases, at temperature T<T_c, the one-electron tunneling current does not vanish at the threshold U_c anymore, but saturates above it at U-U_c T_c<<Delta. Also the bi-particle channel acquires a finite threshold U_c=W_ph T_c<<Delta at the energy W_ph of the 2pi phase soliton.
The variational Feynman formalism for the polaron, extended to an all-coupling treatment of bipolarons, is applied for two impurity atoms in a Bose-Einstein condensate. This shows that if the polaronic coupling strength is large enough the impurities
will form a bound state (the bipolaron). As a function of the mutual repulsion between the impurities two types of bipolaron are distinguished: a tightly bound bipolaron at weak repulsion and a dumbbell bipolaron at strong repulsion. Apart from the binding energy, also the evolution of the bipolaron radius and its effective mass are examined as a function of the strength of the repulsive interaction between the impurities and of the polaronic cupling strength. We then apply the strong-coupling formalism to multiple impuritiy atoms in a condensate which leads to the prediction of multi-polaron formation in the strong coupling regime. The results of the two formalisms are compared for two impurities in a condensate which results in a general qualitative agreement and a quantitative agreement at strong coupling. Typically the system of impurity atoms in a Bose-Einstein condensate is expected to exhibit the polaronic weak coupling regime. However, the polaronic coupling strength is in principle tunable with a Feshbach resonance.
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