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تسجيل مستخدم جديدModification of intergrain connectivity, upper critical field anisotropy, and critical current density in ion irradiated MgB2 films
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We study the effect of 100 MeV Silicon and 200 MeV Gold ion irradiation on the inter and intra grain properties of superconducting thin films of Magnesium Diboride. Substantial decrease in inter-grain connectivity is observed, depending on irradiation dose and type of ions used. We establish that modification of sigma band scattering mechanism, and consequently the upper critical field and anisotropy, depends on the size and directional properties of the extrinsic defects. Post heavy ion irradiation, the upper critical field shows enhancement at a defect density that is five orders of magnitude less compared to neutron irradiation. The critical current density however is best improved through light ion irradiation.
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The high resistivity of many bulk and film samples of MgB2 is most readily explained by the suggestion that only a fraction of the cross-sectional area of the samples is effectively carrying current. Hence the supercurrent (Jc) in such samples will b
e limited by the same area factor, arising for example from porosity or from insulating oxides present at the grain boundaries. We suggest that a correlation should exist, Jc ~ 1/{Rho(300K) - Rho(50K)}, where Rho(300K) - Rho(50K) is the change in the apparent resistivity from 300 K to 50 K. We report measurements of Rho(T) and Jc for a number of films made by hybrid physical-chemical vapor deposition which demonstrate this correlation, although the reduced effective area argument alone is not sufficient. We suggest that this argument can also apply to many polycrystalline bulk and wire samples of MgB2.
Critical fields of four MgB2 thin films with a normal state resistivity ranging from 5 to 50 mWcm and Tc from 29.5 to 38.8 K were measured up to 28 T. Hc2(T) curves present a linear behavior towards low temperatures. Very high critical field values h
ave been found, up to 24 T along the c-axis and 57 T in the basal plane not depending on the normal state resistivity values. In this paper, critical fields will be analyzed taking into account the multiband nature of MgB2; we will show that resistivity and upper critical fields can be ascribed to different scattering mechanisms.
Ex-situ Powder-In-Tube MgB2 tapes prepared with ball-milled, undoped powders showed a strong enhancement of the irreversibility field H*, the upper critical field Hc2 and the critical current density Jc(H) together with the suppression of the anisotr
opy of all of these quantities. Jc reached 104 A/cm2 at 4.2 K and 10 T, with an irreversibility field of about 14 T at 4.2 K, and Hc2 of 9 T at 25 K, high values for not-doped MgB2. The enhanced Jc and H* values are associated with significant grain refinement produced by milling of the MgB2 powder, which enhances grain boundary pinning, although at the same time also reducing the connectivity from about 12% to 8%. Although enhanced pinning and diminished connectivity are in opposition, the overall influence of ball milling on Jc is positive because the increased density of grains with a size comparable with the mean free path produces strong electron scattering that substantially increases Hc2, especially Hc2 perpendicular to the Mg and B planes.
The K- and Co-doped BaFe2As2 (Ba-122) superconducting compounds are potentially useful for applications because they have upper critical fields (Hc2) of well over 50 T, Hc2 anisotropy Gamma < 2, and thin film critical current densities exceeding 1 MA
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