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Recent experiments on quantum Hall bilayers near total filling factor 1 have demonstrated that they support an ``imperfect two-dimensional superfluidity, in which there is nearly dissipationless transport at non-vanishing temperature observed both in counterflow resistance and interlayer tunneling. We argue that this behavior may be understood in terms of a {it coherence network} induced in the bilayer by disorder, in which an incompressible, coherent state exists in narrow regions separating puddles of dense vortex-antivortex pairs. A renormalization group analysis shows that it is appropriate to describe the system as a vortex liquid. We demonstrate that the dynamics of the nodes of the network leads to a power law temperature dependence of the tunneling resistance, whereas thermally activated hops of vortices across the links control the counterflow resistance.
We develop a nonperturbative approach to the quantum Hall bilayer (QHB) at u=1 using trial wave functions. We predict phases of the QHB for arbitrary distance d and, our approach, in a dual picture, naturally introduces a new kind of quasiparticles
We analyze the transport properties of bilayer quantum Hall systems at total filling factor $ u=1$ in drag geometries as a function of interlayer bias, in the limit where the disorder is sufficiently strong to unbind meron-antimeron pairs, the charge
Measurements in GaAs hole bilayers with unequal layer densities reveal a pronounced magneto-resistance hysteresis at the magnetic field positions where either the majority or minority layer is at Landau level filling factor one. At a fixed field in t
The tilting angular dependence of the energy gap was measured in the bilayer quantum Hall state at the Landau level filling $ u=1$ by changing the density imbalance between the two layers. The observed gap behavior shows a continuous transformation f
We have measured the Hall-plateau width and the activation energy of the bilayer quantum Hall (BLQH) states at the Landau-level filling factor $ u=1$ and 2 by tilting the sample and simultaneously changing the electron density in each quantum well. T