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THz quantum cascade lasers based on a novel buried cavity geometry are demonstrated by combining double-metal waveguides with proton implantation. Devices are realised with emission at 2.8 THz, displaying ultra low threshold currents of 19 mA at 4K in both pulsed and continuous wave operation. Thanks to the semiconductor material on both sides of the active region and to the narrow width of the top metal strip, the thermal properties of these devices have been greatly improved. A decrease of the thermal resistance by over a factor of two compared to standard ridge double-metal lasers of similar size has been measured.
Atomic precision advanced manufacturing (APAM) offers creation of donor devices in an atomically thin layer doped beyond the solid solubility limit, enabling unique device physics. This presents an opportunity to use APAM as a pathfinding platform to
We present an experimental study of the turn-on delay in pulsed mid-infrared quantum cascade lasers. We report the unexpectedly long delay time depending on the pumping current, which does not agree with conventional theoretical predictions for step-
We report on a new design of terahertz quantum cascade laser based on a single, potential-inserted quantum well active region. The quantum well properties are engineered through single monolayer InAs inserts. The modeling is based on atomistic, spds*
We investigated the aspect ratio (thickness/width) dependence of the threshold current density required for the current-driven domain wall (DW) motion for the Ni81Fe19 nanowires. It has been shown theoretically that the threshold current density is p
Lithium-intercalated layered transition-metal oxides, LixTMO2, brought about a paradigm change in rechargeable batteries in recent decades and show promise for use in memristors, a type of device for future neural computing and on-chip storage. Therm