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Transistors are key elements for enabling computational hardware in both classical and quantum domains. Here, we propose a voltage-gated spin transistor using itinerant electrons in the Hubbard model which acts at the level of single electron spins. Going beyond classical spintronics, it enables the controlling of the flow of quantum information between distant spin qubits. The transistor has two modes of operation, open and closed, which are realized by two different charge configurations in the gate of the transistor. In the closed mode, the spin information between source and drain is blocked while in the open mode we have free spin information exchange. The switching between the modes takes place within a fraction of the operation time which allows for several subsequent operations within the coherence time of the transistor. The system shows good resilience against thermal fluctuations and dephasing and opens up a practical application for quantum dot arrays.
We propose and analyze a scheme for conditional state transfer in a Heisenberg $XXZ$ spin chain which realizes a quantum spin transistor. In our scheme, the absence or presence of a control spin excitation in the central gate part of the spin chain r
The fundamental property of most single-electron devices with quasicontinuous quasiparticle spectrum on the island is the periodicity of their transport characteristics in the gate voltage. This property is robust even with respect to placing the fer
We design and analyze a solid state qubit based on electron spin and controlled by electrical means. The coded qubit is composed of a three-electron complex in three tunable gated quantum dots. The two logical states of a qubit, |0L> and |1L>, reside
We show that polaritons in an array of interacting micro-cavities with strong atom-photon coupling can form a two-component Bose-Hubbard model. Both polariton species are thereby protected against spontaneous emission as their atomic part is stored i
Optical control of exciton fluxes is realized for indirect excitons in a crossed-ramp excitonic device. The device demonstrates experimental proof of principle for all-optical excitonic transistors with a high ratio between the excitonic signal at th