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We discuss a new narrow-gap ferromagnetic (FM) semiconductor alloy, In(1-x)Mn(x)Sb, and its growth by low-temperature molecular-beam epitaxy. The magnetic properties were investigated by direct magnetization measurements, electrical transport, magnetic circular dichroism, and the magneto-optical Kerr effect. These data clearly indicate that In(1-x)Mn(x)Sb possesses all the attributes of a system with carrier-mediated FM interactions, including well-defined hysteresis loops, a cusp in the temperature dependence of the resistivity, strong negative magnetoresistance, and a large anomalous Hall effect. The Curie temperatures in samples investigated thus far range up to 8.5 K, which are consistent with a mean-field-theory simulation of the carrier-induced ferromagnetism based on the 8-band effective band-orbital method.
A narrow-gap ferromagnetic In(1-x)Mn(x)Sb semiconductor alloy was successfully grown by low-temperature molecular beam epitaxy on CdTe/GaAs hybrid substrates. Ferromagnetic order in In(1-x)Mn(x)Sb was unambiguously established by the observation of c
It is shown that a temperature window between the Curie temperatures of martensite and austenite phases around the room temperature can be obtained by a vacancy-tuning strategy in Mn-poor Mn1-xCoGe alloys (0 <= x <= 0.050). Based on this, a martensit
The composition-dependent behavior of the Dzyaloshinskii-Moriya interaction (DMI), the spin-orbit torque (SOT), as well as anomalous and spin Hall conductivities of Mn$_{1-x}$Fe$_x$Ge alloys have been investigated by first-principles calculations usi
Epitaxial thin films of the substitutionally alloyed half-Heusler series CoTi$_{1-x}$Fe$_x$Sb were grown by molecular beam epitaxy on InAlAs/InP(001) substrates for concentrations 0.0$leq$x$leq$1.0. The influence of Fe on the structural, electronic,
The discovery of high thermoelectric performance in n-type polycrystalline Mg3(Sb,Bi)2 based Zintl compounds has ignited intensive research interest. However, some fundamental questions concerning the anisotropic transport properties and the origin o