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تسجيل مستخدم جديدMicrowave performance of high-density bulk MgB2
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We have performed microwave measurements on superconducting hot-isostatically- pressed (HIPed) bulk MgB2 using a parallel-plate resonator technique. The high density and strength of the HIPed material allowed preparation of samples with mirror-like surfaces for microwave measurements. The microwave surface resistance decreased by about 40% at 20 K when the root-mean-square surface roughness was reduced from 220 nm to 110 nm through surface-polishing and ion-milling. The surface resistance was independent of surface microwave magnetic field at least up to 4 Oe and below 30 K. We attribute this behavior, and the overall low surface resistance (~0.8 mOhms at 10 GHz and 20 K), to the high density of our samples and the absence of weak links between grains.
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We report on the microwave properties of a resonant cylindrical cavity made of bulk MgB2 superconductor, produced by the reactive liquid Mg infiltration process. The frequency response of the cavity has been measured in the range 5-13GHz. Among the v
arious modes, the TE011, resonating at 9.79GHz, exhibits the highest quality factor. For this mode, we have determined the temperature dependence of the quality factor, obtaining values of the order of 10^5 in the temperature range 4.2-30K. The values of the surface resistance deduced from the measurements of the quality factor agree quite well with those independently measured in a small sample of MgB2 extracted from the same specimen from which the cavity has been obtained.
MgB2 hollow wires have been produced with a new technique which uses a conventional wire manufacturing process but is applied to composite billets containing the elemental B and Mg precursors in an appropriate shape. The technique has been applied to
the manufacture of both monofilamentary and multifilamentary wires of several tens meters length. The superconducting transport properties of the MgB2 hollow wires have been measured in magnetic field and in the temperature range from 4.2 to 30 K. Promising results are obtained, which indicate the possibility of application of these wires as superconductors in the temperature range of 15-30 K and at medium-high values of magnetic field.
Polycrystalline MgB2-nDx (x= 0 to 0.1) samples are synthesized by solid-state route with ingredients of Mg, B and n-Diamond. The results from magneto-transport and magnetization of nano-diamond doped MgB2-nDx are reported. Superconducting transition
temperature (Tc) is not affected significantly by x up to x = 0.05 and latter decreases slightly for higher x > 0.05. R(T) vs H measurements show higher Tc values under same applied magnetic fields for the nano-diamond added samples, resulting in higher estimated Hc2 values. From the magnetization measurements it was found that irreversibility field value Hirr for the pristine sample is 7.5 Tesla at 4 K and the same is increased to 13.5 Tesla for 3-wt% nD added sample at the same temperature. The Jc(H) plots at all temperatures show that Jc value is lowest at all applied fields for pristine MgB2 and the sample doped with 3-wt% nD gives the best Jc values at all fields. For the pure sample the value of Jc is of the order of 105 A/cm2 at lower fields but it decreases very fast as the magnetic field is applied and becomes negligible above 7 Tesla. The Jc is 40 times higher than pure MgB2 at 10 K at 6 Tesla field in case of 3%nD doped sample and its value is still of the order of 103 A/cm2 at 10 Tesla for the same sample. On the other hand at 20K the 5%nD sample shows the best performance at higher fields. These results are discussed in terms of extrinsic pinning due to dispersed n-Diamond in the host MgB2 matrix along with the intrinsic pinning due to possible substitution of C at Boron site and increased inter-band scattering for highly doped samples resulting in extraordinary performance of the doped system.
We have developed disk-shaped MgB2 bulk superconducting magnets (20, 30 mm in diameter, 10 mm in thickness) using the in-situ process from Mg and B powders and evaluated the temperature dependence of trapped magnetic field. A pair of two disc-shaped
bulks of 30 mm in diameter and 10 mm in thickness magnetized by field-cooling condition showed trapped fields of 1.2, 2.8 and 3.1 T at 30, 20 and 17.5 K, respectively. High trapped field over 3 T was recorded for the first time.
Sintered samples of MgB2 were irradiated in a fission reactor. Defects in the bulk microstructure are produced during this process mainly by the 10B(n,a)7Li reaction while collisions of fast neutrons with the lattice atoms induce much less damage. Se
lf-shielding effects turn out to be very important and lead to a highly inhomogeneous defect distribution in the irradiated samples. The resulting disorder enhances the normal state resistivity and the upper critical field. The irreversibility line shifts to higher fields at low temperatures and the measured critical current densities increase following irradiation.
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