اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدThe role of contacts in molecular electronics
111
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
Molecular electronic devices are the upmost destiny of the miniaturization trend of electronic components. Although not yet reproducible on large scale, molecular devices are since recently subject of intense studies both experimentally and theoretically, which agree in pointing out the extreme sensitivity of such devices on the nature and quality of the contacts. This chapter intends to provide a general theoretical framework for modelling electronic transport at the molecular scale by describing the implementation of a hybrid method based on Green function theory and density functional algorithms. In order to show the presence of contact-dependent features in the molecular conductance, we discuss three archetypal molecular devices, which are intended to focus on the importance of the different sub-parts of a molecular two-terminal setup.
قيم البحث
اقرأ أيضاً
The influence of contacts on linear transport through a molecular wire attached to mesoscopic tubule leads is studied. It is shown that low dimensional leads, such as carbon nanotubes, in contrast to bulky electrodes, strongly affect transport proper
ties. By focusing on the specificity of the lead-wire contact, we show, in a fully analytical treatment, that the geometry of this hybrid system supports a mechanism of channel selection and a sum rule, which is a distinctive hallmark of the mesoscopic nature of the electrodes.
We report results on the rectification properties of a carbon nanotube (CNT) ring transistor, contacted by CNT leads, whose novel features have been recently communicated by Watanabe et al. [Appl. Phys. Lett. 78, 2928 (2001)]. This paper contains res
ults which are validated by the experimental observations. Moreover, we report on additional features of the transmission of this ring device which are associated with the possibility of breaking the lead inversion symmetry. The linear conductance displays a chessboard-like behavior alternated with anomalous zero-lines which should be directly observable in experiments. We are also able to discriminate in our results structural properties (quasi-onedimensional confinement) from pure topological effects (ring configuration), thus helping to gain physical intuition on the rich ring phenomenology.
We report the fabrication of hexagonal-boron-nitride (hBN) encapsulated multi-terminal WSe$_2$ Hall bars with 2D/2D low-temperature Ohmic contacts as a platform for investigating the two-dimensional (2D) metal-insulator transition. We demonstrate tha
t the WSe$_2$ devices exhibit Ohmic behavior down to 0.25 K and at low enough excitation voltages to avoid current-heating effects. Additionally, the high-quality hBN-encapsulated WSe$_2$ devices in ideal Hall-bar geometry enable us to accurately determine the carrier density. Measurements of the temperature ($T$) and density ($n_s$) dependence of the conductivity $sigma(T,n_s)$ demonstrate scaling behavior consistent with a metal-insulator quantum phase transition driven by electron-electron interactions, but where disorder-induced local magnetic moments are also present. Our findings pave the way for further studies of the fundamental quantum mechanical properties of 2D transition metal dichalcogenides using the same contact engineering.
Doped perovskite cobaltites (e.g., La$_{1-x}$Sr$_x$CoO$_3$) have been extensively studied for their spin-state physics, electronic inhomogeneity, and insulator-metal transitions. Ferromagnetically-interacting spin-state polarons emerge at low $x$ in
the phase diagram of these compounds, eventually yielding long-range ferromagnetism. The onset of long-range ferromagnetism ($x approx 0.18$) is substantially delayed relative to polaron percolation ($x approx 0.05$), however, generating a troubling inconsistency. Here, Monte-Carlo simulations of a disordered classical spin model are used to establish that previously ignored magnetic frustration is responsible for this effect, enabling faithful reproduction of the magnetic phase diagram.
We study electron transport through a multichannel fractional quantum Hall edge in the presence of both interchannel interaction and random tunneling between channels, with emphasis on the role of contacts. The prime example in our discussion is the
edge at filling factor 2/3 with two counterpropagating channels. Having established a general framework to describe contacts to a multichannel edge as thermal reservoirs, we particularly focus on the line-junction model for the contacts and investigate incoherent charge transport for an arbitrary strength of interchannel interaction beneath the contacts and, possibly different, outside them. We show that the conductance does not explicitly depend on the interaction strength either in or outside the contact regions (implicitly, it only depends through renormalization of the tunneling rates). Rather, a long line-junction contact is characterized by a single parameter which defines the modes that are at thermal equilibrium with the contact and is determined by the interplay of various types of scattering beneath the contact. This parameter -- playing the role of an effective interaction strength within an idealized model of thermal reservoirs -- is generically nonzero and affects the conductance. We formulate a framework of fractionalization-renormalized tunneling to describe the effect of disorder on transport in the presence of interchannel interaction. Within this framework, we give a detailed discussion of charge equilibration for arbitrarily strong interaction in the bulk of the edge and arbitrary effective interaction characterizing the line-junction contacts.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
