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High performance Terahertz (THz) photodetector has drawn wide attention and got great improvement due to its significant application in biomedical, astrophysics, nondestructive inspection, 6th generation communication system as well as national security application. Here we demonstrate a novel broadband photon-type THz/infrared (IR) photodetector based on the GaAs/AlxGa1-xAs ratchet structure. This kind of photodetector realizes a THz photon-response based on the electrically pumped hot hole injection and overcomes the internal workfunction related spectral response limit. An ultrabroadband photoresponse from 4 THz to 300 THz and a peak responsivity of 50.3 mA/W are realized at negative bias voltage of -1 V. The photodetector also presents a bias-tunable photon-response characteristic due to the asymmetric structure. The ratchet structure also induces an evident photocurrent even at zero bias voltage, which indicates the detector can be regard as a broadband photovoltaic-like detector. The rectification characteristic and high temperature operation possibility of the photodetector are also discussed. This work not only demonstrates a novel ultrabroadband THz/IR photodetector, but also provides a new method to study the light-responsive ratchet.
An ultrabroadband upconversion device is demonstrated by direct tandem integration of a p-type GaAs/AlxGa1-xAs ratchet photodetector (RP) with a GaAs double heterojunction LED (DH-LED) using the molecular beam epitaxy (MBE). An ultrabroadband photore
Coupling phase-stable single-cycle terahertz (THz) pulses to scanning tunneling microscope (STM) junctions enables spatio-temporal imaging with femtosecond temporal and r{A}ngstrom spatial resolution. The time resolution achieved in such THz-gated ST
We present a mid-IR ($lambda approx$ 8.3 $mu$m) quantum well infrared photodetector (QWIP) fabricated on a mid-IR transparent substrate, allowing photodetection with illumination from either the front surface or through the substrate. The device is b
We demonstrate experimentally the operation of a deterministic Josephson ratchet with tunable asymmetry. The ratchet is based on a $varphi$ Josephson junction with a ferromagnetic barrier operating in the underdamped regime. The system is probed also
Atomically thin two dimensional (2D) materials are promising candidates for miniaturized high-performance optoelectronic devices. Here, we report on multilayer MoTe2 photodetectors contacted with asymmetric electrodes based on n- and p-type graphene