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The control of the electronic properties of materials via the vacuum fields of cavity electromagnetic resonators is one of the emerging frontiers of condensed matter physics. We show here that the enhancement of vacuum field fluctuations in subwavelength split-ring resonators dramatically affects arguably one of the most paradigmatic quantum protectorates, namely the quantum Hall electron transport in high-mobility 2D electron gases. The observed breakdown of the topological protection of the integer quantum Hall effect is interpreted in terms of a long-range cavity-mediated electron hopping where the anti-resonant terms of the light-matter coupling finally result into a finite resistivity induced by the vacuum fluctuations. The present experimental platform can be used for any 2D material and provides new ways to manipulate electron phases in matter thanks to vacuum-field engineering
Electron pairing is a rare phenomenon appearing only in a few unique physical systems; e.g., superconductors and Kondo-correlated quantum dots. Here, we report on an unexpected, but robust, electron pairing in the integer quantum Hall effect (IQHE) r
We study the spectral properties of infinite rectangular quantum graphs in the presence of a magnetic field. We study how these properties are affected when three-dimensionality is considered, in particular, the chaological properties. We then establ
We investigate the emergence of long-range electron hopping mediated by cavity vacuum fields in disordered quantum Hall systems. We show that the counter-rotating (anti-resonant) light-matter interaction produces an effective hopping between disorder
We report on numerical studies into the interplay of disorder and electron-electron interactions within the integer quantum Hall regime, where the presence of a strong magnetic field and two-dimensional confinement of the electronic system profoundly
The quantum anomalous Hall effect (QAHE) realizes dissipationless longitudinal resistivity and quantized Hall resistance without the need of an external magnetic field. However, when reducing the device dimensions or increasing the current density, a