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Vanadium Dioxide (VO2) is a strongly correlated material, which exhibits insulator to metal transition at ~68 C along with large resistivity and infrared optical reflectance modulation. In this work, we use atmospheric pressure thermal oxidation of Vanadium to synthesize VO2 films on glass and ITO coated glass substrates. With the optimized short oxidation durations of 2 min and 4 min, the synthesized VO2 film shows high optical reflectance switching in long-wavelength infrared on glass substrates and mid-wavelength infrared on ITO coated glass substrates, respectively. Peak reflectance switching values of ~76% and ~79% are obtained on the respective substrates, which are among the highest reported values. Using the reflectance data, we extract VO2 complex refractive index in infrared wavelengths, in both the insulating and metallic phases. The extracted refractive index shows good agreement with VO2 synthesized using other methods. This demonstration of high optical reflectance switching in VO2 thin films, grown on low cost glass and ITO coated glass substrates, using a simple low thermal budget process will aid in enhancing VO2 applications in the optical domain.
Vanadium dioxide is a complex oxide material, which shows large resistivity and optical reflectance change while transitioning from the insulator to metal phase at ~68 {deg}C. In this work, we use a modified atmospheric thermal oxidation method to ox
Vanadium dioxide (VO2) is a phase transition material that undergoes a reversible insulator-metal phase transition at ~ 68 C. Atmospheric pressure thermal oxidation (APTO) of vanadium (V) is a simple VO2 synthesis method in which V thin film is oxidi
The optical/infrared properties of films of vanadium dioxide (VO2) and vanadium sesquioxide (V2O3) have been investigated via ellipsometry and near-normal incidence reflectance measurements from far infrared to ultraviolet frequencies. Significant ch
Highly flexible electromagnetic interference (EMI) shielding material with excellent shielding performance is of great significance to practical applications in next-generation flexible devices. However, most EMI materials suffer from insufficient fl
This work reports the strain effect on the electrical properties of highly doped n-type single crystalline cubic silicon carbide (3C-SiC) transferred onto a 6-inch glass substrate employing an anodic bonding technique. The experimental data shows hig