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Among the transparent conducting oxides, the perovskite barium stannate is most promising for various electronic applications due to its outstanding carrier mobility achieved at room temperature. Most important characteristics however, $i.e.$, its band gap, effective masses, and absorption edge remain controversial. Here, we provide a fully consistent picture by combining state-of-the-art $ab~initio$ methodology with forefront electron energy-loss spectroscopy (EELS) and optical absorption measurements. On- and off-axis valence EELS spectra, featuring signals originating from band gap transitions, are acquired on defect-free sample regions of a BaSnO$_{3}$ single crystal. These high-energy-resolution measurements are able to capture also very weak excitations below the optical gap, attributed to indirect transitions. By temperature-dependent optical absorption measurements, we assess band-gap renormalization effects induced by electron-phonon coupling. Overall, we find for the effective electronic mass, the direct and the indirect gap, the optical gap as well as the absorption onsets and spectra excellent agreement between both experimental techniques and the theoretical many-body results, supporting also the picture of a phonon-mediated mechanism where indirect transitions are activated by phonon-induced symmetry lowering. This work demonstrates a fruitful connection between different high-level theoretical and experimental methods for exploring the characteristics of advanced materials.
Epitaxial perovskite oxide interfaces with different symmetry of the epitaxial layers have attracted considerable attention due to the emergence of novel behaviors and phenomena. In this paper, we show by aberration corrected transmission electron mi
In-situ X-ray diffraction (XRD) and transmission electron microscopy (TEM) have been used to investigate many physical science phenomena, ranging from phase transitions, chemical reaction and crystal growth to grain boundary dynamics. A major limitat
Cubic perovskite oxides are emerging high-mobility transparent conducting oxides (TCOs), but Ge-based TCOs had not been known until the discovery of metastable cubic SrGeO$_3$. $0.5 times 0.4 times 0.2$-mm$^3$ large single crystals of the cubic SrGeO
The electronic structure in the new transition metal carbide Ti4SiC3 has been investigated by bulk-sensitive soft x-ray emission spectroscopy and compared to the well-studied Ti3SiC2 and TiC systems. The measured high-resolution Ti L, C K and Si L x-
Machine learning driven interatomic potentials, including Gaussian approximation potential (GAP) models, are emerging tools for atomistic simulations. Here, we address the methodological question of how one can fit GAP models that accurately predict