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We measure the phase velocities of surface acoustic waves (SAWs) propagating at different crystal orientations on (001)-cut GaAs substrates and their temperature dependance. We design and fabricate sets of interdigital transducers (IDTs) to induce 4 {mu}m SAWs via the inverse piezoelectric (PZE) effect between the PZE [110] direction (set as {theta} = 0{deg}) and the non-PZE [100] direction ({theta} = 45{deg}) on GaAs. We also prepare ZnO film sputtered GaAs substrates in order to launch SAWs efficiently by IDTs even in the non-PZE direction. We quantify acoustic velocities between 1.4 and 300 K from the resonant frequencies in the S11 parameter using a network analyzer. We observe parabolic velocity-temperature trends at all {theta}-values both on GaAs and ZnO/GaAs substrates. Below 200 K, in ZnO/GaAs substrates slower SAW modes appear around the [110] direction, which are unseen at RT.
Surface acoustic wave (SAW) devices based on thin films of ZnO are a well established technology. However, SAW devices on bulk ZnO crystals are not practical at room temperature due to the significant damping caused by finite electrical conductivity
A hybrid device comprising a (Al)GaAs quantum dot heterostructure and a LiNbO$_3$ surface acoustic wave resonator is fabricated by heterointegration. High acoustic quality factors $Q>4000$ are demonstrated for an operation frequency $fapprox 300$ MHz
We demonstrate that photoemission properties of GaAs photocathodes (PCs) can be altered by surface acoustic waves (SAWs) generated on the PC surface due to dynamical piezoelectric fields of SAWs. Simulations with COMSOL indicate that electron effecti
The ability to generate, amplify, mix, and modulate sound with no harmonic distortion in a passive opto-acoustic device would revolutionize the field of acoustics. The photo-thermo-acoustic (PTA) effect allows to transduce light into sound without an
Extensive Kerr microscopy studies reveal a strongly temperature dependent domain wall dynamics in Hall-bars made from compressively strained GaMnAs. Depending on the temperature magnetic charging of domain walls is observed and nucleation rates depen