ترغب بنشر مسار تعليمي؟ اضغط هنا

FPGA Synthesis of Ternary Memristor-CMOS Decoders

240   0   0.0 ( 0 )
 نشر من قبل Jason Kamran Jr Eshraghian
 تاريخ النشر 2021
  مجال البحث الهندسة المعلوماتية
والبحث باللغة English




اسأل ChatGPT حول البحث

The search for a compatible application of memristor-CMOS logic gates has remained elusive, as the data density benefits are offset by slow switching speeds and resistive dissipation. Active microdisplays typically prioritize pixel density (and therefore resolution) over that of speed, where the most widely used refresh rates fall between 25-240 Hz. Therefore, memristor-CMOS logic is a promising fit for peripheral IO logic in active matrix displays. In this paper, we design and implement a ternary 1-3 line decoder and a ternary 2-9 line decoder which are used to program a seven segment LED display. SPICE simulations are conducted in a 50-nm process, and the decoders are synthesized on an Altera Cyclone IV field-programmable gate array (FPGA) development board which implements a ternary memristor model designed in Quartus II. We compare our hardware results to a binary coded decimal (BCD)-to-seven segment display decoder, and show our memristor-CMOS approach reduces the total IO power consumption by a factor of approximately 6 times at a maximum synthesizable frequency of 293.77MHz. Although the speed is approximately half of the native built-in BCD-to-seven decoder, the comparatively slow refresh rates of typical microdisplays indicate this to be a tolerable trade-off, which promotes data density over speed.



قيم البحث

اقرأ أيضاً

Brain-inspired computing and neuromorphic hardware are promising approaches that offer great potential to overcome limitations faced by current computing paradigms based on traditional von-Neumann architecture. In this regard, interest in developing memristor crossbar arrays has increased due to their ability to natively perform in-memory computing and fundamental synaptic operations required for neural network implementation. For optimal efficiency, crossbar-based circuits need to be compatible with fabrication processes and materials of industrial CMOS technologies. Herein, we report a complete CMOS-compatible fabrication process of TiO2-based passive memristor crossbars with 700 nm wide electrodes. We show successful bottom electrode fabrication by a damascene process, resulting in an optimised topography and a surface roughness as low as 1.1 nm. DC sweeps and voltage pulse programming yield statistical results related to synaptic-like multilevel switching. Both cycle-to-cycle and device-to-device variability are investigated. Analogue programming of the conductance using sequences of 200 ns voltage pulses suggest that the fabricated memories have a multilevel capacity of at least 3 bits due to the cycle-to-cycle reproducibility.
The paper studies the main aspects of the realization of 2 x 2 ternary reversible circuits based on cycles, considering the results of the realization of all 362,880 2 x 2 ternary reversible functions. It has been shown that in most cases, realizatio ns obtained with the MMD+ algorithm have a lower complexity (in terms of cost) than realizations based on cycles. In the paper it is shown under which conditions realizations based on transpositions may have a higher or a lower cost than realizations using larger cycles. Finally it is shown that there are a few special cases where realizations based on transpositions have the same cost or possibly lower cost than the MMD+ based realizations. Aspects of scaleability are considered in terms of 2 x 2-based n x n reversible circuits.
72 - Frank Zhigang Wang 2021
In this reply, we will provide our impersonal, point-to-point responses to the major criticisms (in bold and underlined) in arXiv:1909.12464. Firstly, we will identify a number of (imperceptibly hidden) mistakes in the Comment in understanding/interp reting our physical model. Secondly, we will use a 3rd-party experiment carried out in 1961 (plus other 3rd-party experiments thereafter) to further support our claim that our invented Phi memristor is memristive in spite of the existence of a parasitic inductor effect. Thirdly, we will analyse this parasitic effect mathematically, introduce our work-in-progress (in nanoscale) and point out that this parasitic inductor effect should not become a big worry since it can be completely removed in the macro-scale devices and safely neglected in the nano-scale devices.
Synaptic Sampling Machine (SSM) is a type of neural network model that considers biological unreliability of the synapses. We propose the circuit design of the SSM neural network which is realized through the memristive-CMOS crossbar structure with t he synaptic sampling cell (SSC) being used as a basic stochastic unit. The increase in the edge computing devices in the Internet of things era, drives the need for hardware acceleration for data processing and computing. The computational considerations of the processing speed and possibility for the real-time realization pushes the synaptic sampling algorithm that demonstrated promising results on software for hardware implementation.
The superior density of passive analog-grade memristive crossbars may enable storing large synaptic weight matrices directly on specialized neuromorphic chips, thus avoiding costly off-chip communication. To ensure efficient use of such crossbars in neuromorphic computing circuits, variations of current-voltage characteristics of crosspoint devices must be substantially lower than those of memory cells with select transistors. Apparently, this requirement explains why there were so few demonstrations of neuromorphic system prototypes using passive crossbars. Here we report a 64x64 passive metal-oxide memristor crossbar circuit with ~99% device yield, based on a foundry-compatible fabrication process featuring etch-down patterning and low-temperature budget, conducive to vertical integration. The achieved ~26% variations of switching voltages of our devices were sufficient for programming 4K-pixel gray-scale patterns with an average tuning error smaller than 4%. The analog properties were further verified by experimentally demonstrating MNIST pattern classification with a fidelity close to the software-modeled limit for a network of this size, with an ~1% average error of import of ex-situ-calculated synaptic weights. We believe that our work is a significant improvement over the state-of-the-art passive crossbar memories in both complexity and analog properties.
التعليقات
جاري جلب التعليقات جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
mircosoft-partner

هل ترغب بارسال اشعارات عن اخر التحديثات في شمرا-اكاديميا