اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدChirality-induced spin texture switching in twisted bilayer graphene
142
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
The interlayer van der Waals interaction in twisted bilayer graphene (tBLG) induces both in-plane and out-of-plane atomic displacements showing complex patterns that depend on the twist angle. In particular, for small twist angles, within each graphene layer, the relaxations give rise to a vortex-like displacement pattern which is known to affect the dispersion of the flat bands. Here, we focus on yet another structural property, the chirality of the twisted bilayer. We perform first-principles calculations based on density functional theory to investigate the properties induced by twist chirality in both real and momentum space. In real space, we study the interplay between twist chirality and atomic relaxation patterns. In momentum space, we investigate the spin textures around the $K$ points of the Brillouin zone, showing that alternating vortex-like textures are correlated with the chirality of tBLG. Interestingly, the helicity of each vortex is inverted by changing the chirality while the different twist angles also modify the spin textures. We discuss the origin of the spin textures by calculating the layer weights and using plot regression models.
قيم البحث
اقرأ أيضاً
Twisted bilayer graphene (TBG) exhibits fascinating correlation-driven phenomena like the superconductivity and Mott insulating state, with flat bands and a chiral lattice structure. We find by quantum transport calculations that the chirality leads
to a giant unidirectional magnetoresistance (UMR) in TBG, where the unidirectionality refers to the resistance change under the reversal of the direction of the current or magnetic field. We point out that flat bands significantly enhance this effect. The UMR increases quickly upon reducing the twist angle and reaches about 20% for an angle of 1.5$^circ$ in a 10 T in-plane magnetic field. We propose the band structure topology (asymmetry), which leads to a direction-sensitive mean free path, as a useful way to anticipate the UMR effect. The UMR provides a probe for chirality and band flatness in the twisted bilayers.
Twisted bilayer graphene (TBG) aligned with hexagonal boron nitride (h-BN) substrate can exhibit an anomalous Hall effect at 3/4 filling due to the spontaneous valley polarization in valley resolved moire bands with opposite Chern number [Science 367
, 900 (2020), Science 365, 605 (2019)]. It was observed that a small DC current is able to switch the valley polarization and reverse the sign of the Hall conductance [Science 367, 900 (2020), Science 365, 605 (2019)]. Here, we discuss the mechanism of the current switching of valley polarization near the transition temperature, where bulk dissipative transport dominates. We show that for a sample with rotational symmetry breaking, a DC current may generate an electron density difference between the two valleys (valley density difference). The current induced valley density difference in turn induces a first order transition in the valley polarization. We emphasize that the inter-valley scattering plays a central role since it is the channel for exchanging electrons between the two valleys. We further estimate the valley density difference in the TBG/h-BN system with a microscopic model, and find a significant enhancement of the effect in the magic angle regime.
We theoretically calculate the impurity-scattering induced resistivity of twisted bilayer graphene at low twist angles where the graphene Fermi velocity is strongly suppressed. We consider, as a function of carrier density, twist angle, and temperatu
re, both long-ranged Coulomb scattering and short-ranged defect scattering within a Boltzmann theory relaxation time approach. For experimentally relevant disorder, impurity scattering contributes a resistivity comparable to (much larger than) the phonon scattering contribution at high (low) temperatures. Decreasing twist angle leads to larger resistivity, and in general, the resistivity increases (decreases) with increasing temperature (carrier density). Inclusion of the van Hove singularity in the theory leads to a strong increase in the resistivity at higher densities, where the chemical potential is close to a van Hove singularity, leading to an apparent density-dependent plateau type structure in the resistivity, which has been observed in recent transport experiments. We also show that the Matthissens rule is strongly violated in twisted bilayer graphene at low twist angles.
We investigate the bandwidth compression due to out of plane pressure of the moire flatbands near charge neutrality in twisted bilayer graphene for a continuous range of small rotation angles of up to $sim2.5^{circ}$. The flatband bandwidth minima an
gles are found to grow linearly with interlayer coupling {omega} and decrease with Fermi velocity. Application of moderate pressure values of up to 2.5 GPa achievable through a hydraulic press should allow accessing a flatband for angles as large as $sim 1.5$^{circ}$ instead of $sim 1 circ$ at zero pressure. This reduction of the moire pattern length for larger twist angle implies an increase of the effective Coulomb interaction scale per moire cell by about 50% and enhance roughly by a factor of $sim 2$ the elastic energy that resists the commensuration strains due to the moire pattern. Our results suggest that application of pressure on twisted bilayer graphene nanodevices through a hydraulic press will notably facilitate the device preparation efforts required for exploring the ordered phases near magic angle flatbands.
We investigate the interplay of magnetic fluctuations and Cooper pairing in twisted bilayer graphene from a purely microscopic model within a large-scale tight-binding approach resolving the AA ngstrom scale. For local onsite repulsive interactions a
nd using the random-phase approximation for spin fluctuations, we derive a microscopic effective pairing interaction that we use for self-consistent solutions of the Bogoliubov-de-Gennes equations of superconductivity. We study the predominant pairing types as function of interaction strength, temperature and band filling. For large regions of this parameter space, we find chiral $d$-wave pairing regimes, spontaneously breaking time-reversal symmetry, separated by magnetic instabilities at integer band fillings. Interestingly, the $d$-wave pairing is strongly concentrated in the AA regions of the moire unit cell and exhibits phase windings of integer multiples of $2pi$ around these superconducting islands, i.e. pinned vortices. The spontaneous circulating current creates a distinctive magnetic field pattern. This signature of the chiral pairing should be measurable by state-of-the-art experimental techniques.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
