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تسجيل مستخدم جديدChirality induced Giant Unidirectional Magnetoresistance in Twisted Bilayer Graphene
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Twisted bilayer graphene (TBG) exhibits fascinating correlation-driven phenomena like the superconductivity and Mott insulating state, with flat bands and a chiral lattice structure. We find by quantum transport calculations that the chirality leads to a giant unidirectional magnetoresistance (UMR) in TBG, where the unidirectionality refers to the resistance change under the reversal of the direction of the current or magnetic field. We point out that flat bands significantly enhance this effect. The UMR increases quickly upon reducing the twist angle and reaches about 20% for an angle of 1.5$^circ$ in a 10 T in-plane magnetic field. We propose the band structure topology (asymmetry), which leads to a direction-sensitive mean free path, as a useful way to anticipate the UMR effect. The UMR provides a probe for chirality and band flatness in the twisted bilayers.
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The interlayer van der Waals interaction in twisted bilayer graphene (tBLG) induces both in-plane and out-of-plane atomic displacements showing complex patterns that depend on the twist angle. In particular, for small twist angles, within each graphe
ne layer, the relaxations give rise to a vortex-like displacement pattern which is known to affect the dispersion of the flat bands. Here, we focus on yet another structural property, the chirality of the twisted bilayer. We perform first-principles calculations based on density functional theory to investigate the properties induced by twist chirality in both real and momentum space. In real space, we study the interplay between twist chirality and atomic relaxation patterns. In momentum space, we investigate the spin textures around the $K$ points of the Brillouin zone, showing that alternating vortex-like textures are correlated with the chirality of tBLG. Interestingly, the helicity of each vortex is inverted by changing the chirality while the different twist angles also modify the spin textures. We discuss the origin of the spin textures by calculating the layer weights and using plot regression models.
Recent studies have shown that moir{e} flat bands in a twisted bilayer graphene(TBG) can acquire nontrivial Berry curvatures when aligned with hexagonal boron nitride substrate [1, 2], which can be manifested as a correlated Chern insulator near the
3/4 filling [3, 4]. In this work, we show that the large Berry curvatures in the moir{e} bands lead to strong nonlinear Hall(NLH) effect in a strained TBG with general filling factors. Under a weak uniaxial strain $sim 0.1%$, the Berry curvature dipole which characterizes the nonlinear Hall response can be as large as $sim$ 200{AA}, exceeding the values of all previously known nonlinear Hall materials [5-14] by two orders of magnitude. The dependence of the giant NLH effect as a function of electric gating, strain and twist angle is further investigated systematically. Importantly, we point out that the giant NLH effect appears generically for twist angle near the magic angle due to the strong susceptibility of nearly flat moir{e} bands to symmetry breaking induced by strains. Our results establish TBG as a practical platform for tunable NLH effect and novel transport phenomena driven by nontrivial Berry phases.
We discuss plasmons of biased twisted bilayer graphene when the Fermi level lies inside the gap. The collective excitations are a network of chiral edge plasmons (CEP) entirely composed of excitations in the topological electronic edge states (EES) t
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