اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدExtended Nappi-Witten Geometry for the Fractional Quantum Hall Effect
47
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
Motivated by the recent progresses in the formulation of geometric theories for the fractional quantum Hall states, we propose a novel non-relativistic geometric model for the Laughlin states based on an extension of the Nappi-Witten geometry. We show that the U(1) gauge sector responsible for the fractional Hall conductance, the gravitational Chern-Simons action and Wen-Zee term associated to the Hall viscosity can be derived from a single Chern-Simons theory with a gauge connection that takes values in the extended Nappi-Witten algebra. We then provide a new derivation of the chiral boson associated to the gapless edge states from the Wess-Zumino-Witten model that is induced by the Chern-Simons theory on the boundary.
قيم البحث
اقرأ أيضاً
In this work, we propose the quantum Hall system as a platform for exploring black hole phenomena. By exhibiting deep rooted commonalities between lowest Landau level and spacetime symmetries, we show that features of both quantum Hall and gravitatio
nal systems can be elegantly captured by a simple quantum mechanical model, the inverted harmonic oscillator. Through this correspondence, we argue that radiation phenomena in gravitational situations, such as presented by W. G. Unruh and S. Hawking, bears a parallel with saddle-potential scattering of quantum Hall quasiparticles. We also find that scattering by the quantum Hall saddle potential can mimic the signature quasinormal modes in black holes, such as theoretically demonstrated through Gaussian scattering off a Schwarzschild black hole by C. V. Vishveshwara. We propose a realistic quantum Hall point contact setup for probing these temporally decaying modes in quasiparticle tunneling, offering a new mesoscopic parallel for black hole ringdown.
Suppose a classical electron is confined to move in the $xy$ plane under the influence of a constant magnetic field in the positive $z$ direction. It then traverses a circular orbit with a fixed positive angular momentum $L_z$ with respect to the cen
ter of its orbit. It is an underappreciated fact that the quantum wave functions of electrons in the ground state (the so-called lowest Landau level) have an azimuthal dependence $propto exp(-imphi) $ with $mgeq 0$, seemingly in contradiction with the classical electron having positive angular momentum. We show here that the gauge-independent meaning of that quantum number $m$ is not angular momentum, but that it quantizes the distance of the center of the electrons orbit from the origin, and that the physical angular momentum of the electron is positive and independent of $m$ in the lowest Landau levels. We note that some textbooks and some of the original literature on the fractional quantum Hall effect do find wave functions that have the seemingly correct azimuthal form $proptoexp(+imphi)$ but only on account of changing a sign (e.g., by confusing different conventions) somewhere on the way to that result.
We report observation of the fractional quantum Hall effect (FQHE) in high mobility multi-terminal graphene devices, fabricated on a single crystal boron nitride substrate. We observe an unexpected hierarchy in the emergent FQHE states that may be ex
plained by strongly interacting composite Fermions with full SU(4) symmetric underlying degrees of freedom. The FQHE gaps are measured from temperature dependent transport to be up 10 times larger than in any other semiconductor system. The remarkable strength and unusual hierarcy of the FQHE described here provides a unique opportunity to probe correlated behavior in the presence of expanded quantum degrees of freedom.
The interplay between interaction and disorder-induced localization is of fundamental interest. This article addresses localization physics in the fractional quantum Hall state, where both interaction and disorder have nonperturbative consequences. W
e provide compelling theoretical evidence that the localization of a single quasiparticle of the fractional quantum Hall state at filling factor $ u=n/(2n+1)$ has a striking {it quantitative} correspondence to the localization of a single electron in the $(n+1)$th Landau level. By analogy to the dramatic experimental manifestations of Anderson localization in integer quantum Hall effect, this leads to predictions in the fractional quantum Hall regime regarding the existence of extended states at a critical energy, and the nature of the divergence of the localization length as this energy is approached. Within a mean field approximation these results can be extended to situations where a finite density of quasiparticles is present.
In the fractional quantum Hall effect regime we measure diagonal ($rho_{xx}$) and Hall ($rho_{xy}$) magnetoresistivity tensor components of two-dimensional electron system (2DES) in gated GaAs/Al$_{x}$Ga$_{1-x}$As heterojunctions, together with capac
itance between 2DES and the gate. We observe 1/3- and 2/3-fractional quantum Hall effect at rather low magnetic fields where corresponding fractional minima in the thermodynamical density of states have already disappeared manifesting complete suppression of the quasiparticle energy gaps.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
