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We carried out a comprehensive study of electronic transport, thermal and thermodynamic properties in FeCr$_2$Te$_4$ single crystals. It exhibits bad-metallic behavior and anomalous Hall effect (AHE) below a weak-itinerant paramagentic-to-ferrimagnetic transition $T_c$ $sim$ 123 K. The linear scaling between the anomalous Hall resistivity $rho_{xy}$ and the longitudinal resistivity $rho_{xx}$ implies that the AHE in FeCr$_2$Te$_4$ is most likely dominated by extrinsic skew-scattering mechanism rather than intrinsic KL or extrinsic side-jump mechanism, which is supported by our Berry phase calculations.
The intrinsic antiferromagnetic (AFM) interlayer coupling in two-dimensional magnetic topological insulator MnBi$_2$Te$_4$ places a restriction on realizing stable quantum anomalous Hall effect (QAHE) [Y. Deng et al., Science 367, 895 (2020)]. Throug
Quantum anomalous Hall effect (QAHE) has been experimentally realized in magnetically-doped topological insulators or intrinsic magnetic topological insulator MnBi$_2$Te$_4$ by applying an external magnetic field. However, either the low observation
We present magnetotransport data on the ferrimagnet GdMn$_6$Sn$_6$. From the temperature dependent data we are able to extract a large instrinsic contribution to the anomalous Hall effect $sigma_{xz}^{int} sim$ 32 $Omega^{-1}cm^{-1}$ and $sigma_{xy}^
We report the observation of anomalous Hall resistivity in single crystals of EuAl$_4$, a centrosymmetric tetragonal compound, which exhibits coexisting antiferromagnetic (AFM) and charge-density-wave (CDW) orders with onset at $T_mathrm{N} sim 15.6$
The quantum anomalous Hall (QAH) effect has recently been realized in thin films of intrinsic magnetic topological insulators (IMTIs) like MnBi$_2$Te$_4$. Here we point out that that the QAH gaps of these IMTIs can be optimized, and that both axion i