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تسجيل مستخدم جديدGate-Tunable Quantum Anomalous Hall Effects in MnBi$_2$Te$_4$ Thin Films
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The quantum anomalous Hall (QAH) effect has recently been realized in thin films of intrinsic magnetic topological insulators (IMTIs) like MnBi$_2$Te$_4$. Here we point out that that the QAH gaps of these IMTIs can be optimized, and that both axion insulator/semimetal and Chern insulator/semimetal transitions can be driven by electrical gate fields on the $sim 10$ meV/nm scale. This effect is described by combining a simplified coupled-Dirac-cone model of multilayer thin films with Schr{o}dinger-Poisson self-consistent-field equations.
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More than forty years ago, axion was postulated as an elementary particle with a low mass and weak interaction in particle physics to solve the strong $mathcal{CP}$ (charge conjugation and parity) puzzle. Axions are also considered as a possible comp
onent of dark matter of the universe. However, the existence of axions in nature has not been confirmed. Interestingly, axions arise as pseudoscalar fields derived from the Chern-Simons theory in condensed matter physics. In antiferromagnetic insulators, the axion field can become dynamical induced by spin-wave excitations and exhibits rich exotic phenomena, such as, the chiral magnetic effect, axionic polariton and so on. However, the study of the dynamical axion field is rare due to the lack of real materials. Recently, MnBi$_2$Te$_4$ was discovered to be an antiferromagnetic topological insulator with a quantized axion field protected by the inversion symmetry $mathcal{P}$ and the magnetic-crystalline symmetry $mathcal{S}$. Here, we studied MnBi$_2$Te$_4$ films in which both the $mathcal{P}$ and $mathcal{S}$ symmetries are spontaneously broken and found that the dynamical axion field and largely tunable dynamical magnetoelectric effects can be realized through tuning the thickness of MnBi$_2$Te$_4$ films, the temperature and the element substitution. Our results open a broad avenue to study axion dynamics in antiferromagnetic topological insulator MnBi$_2$Te$_4$ and related materials, and also is hopeful to promote the research of dark matter.
Quantum anomalous Hall effect (QAHE) has been experimentally realized in magnetically-doped topological insulators or intrinsic magnetic topological insulator MnBi$_2$Te$_4$ by applying an external magnetic field. However, either the low observation
temperature or the unexpected external magnetic field (tuning all MnBi$_2$Te$_4$ layers to be ferromagnetic) still hinders further application of QAHE. Here, we theoretically demonstrate that proper stacking of MnBi$_2$Te$_4$ and Sb$_2$Te$_3$ layers is able to produce intrinsically ferromagnetic van der Waals heterostructures to realize the high-temperature QAHE. We find that interlayer ferromagnetic transition can happen at $T_{rm C}=42~rm K$ when a five-quintuple-layer Sb$_2$Te$_3$ topological insulator is inserted into two septuple-layer MnBi$_2$Te$_4$ with interlayer antiferromagnetic coupling. Band structure and topological property calculations show that MnBi$_2$Te$_4$/Sb$_2$Te$_3$/MnBi$_2$Te$_4$ heterostructure exhibits a topologically nontrivial band gap around 26 meV, that hosts a QAHE with a Chern number of $mathcal{C}=1$. In addition, our proposed materials system should be considered as an ideal platform to explore high-temperature QAHE due to the fact of natural charge-compensation, originating from the intrinsic n-type defects in MnBi$_2$Te$_4$ and p-type defects in Sb$_2$Te$_3$.
Combining the ability to prepare high-quality, intrinsic Bi$_2$Te$_3$ topological insulator thin films of low carrier density with in-situ protective capping, we demonstrate a pronounced, gate-tunable change in transport properties of Bi$_2$Te$_3$ th
in films. Using a back-gate, the carrier density is tuned by a factor of $sim 7$ in Al$_2$O$_3$ capped Bi$_2$Te$_3$ sample and by a factor of $sim 2$ in Te capped Bi$_2$Te$_3$ films. We achieve full depletion of bulk carriers, which allows us to access the topological transport regime dominated by surface state conduction. When the Fermi level is placed in the bulk band gap, we observe the presence of two coherent conduction channels associated with the two decoupled surfaces. Our magnetotransport results show that the combination of capping layers and electrostatic tuning of the Fermi level provide a technological platform to investigate the topological properties of surface states in transport experiments and pave the way towards the implementation of a variety of topological quantum devices.
The intrinsic antiferromagnetic (AFM) interlayer coupling in two-dimensional magnetic topological insulator MnBi$_2$Te$_4$ places a restriction on realizing stable quantum anomalous Hall effect (QAHE) [Y. Deng et al., Science 367, 895 (2020)]. Throug
h density functional theory calculations, we demonstrate the possibility of tuning the AFM coupling to the ferromagnetic coupling in MnBi$_2$Te$_4$ films by alloying about 50% V with Mn. As a result, QAHE can be achieved without alternation with the even or odd septuple layers. This provides a practical strategy to get robust QAHE in ultrathin MnBi$_2$Te$_4$ films, rendering them attractive for technological innovations.
The unoccupied part of the band structure in the magnetic topological insulator MnBi$_2$Te$_4$ is studied by first-principles calculations. We find a second, unoccupied topological surface state with similar electronic structure to the celebrated occ
upied topological surface state. This state is energetically located approximate $1.6$ eV above the occupied Dirac surface state around $Gamma$ point, which permit it to be directly observed by the two-photon angle-resolved photoemission spectroscopy. We propose a unified effective model for the occupied and unoccupied surface states. Due to the direct optical coupling between these two surface states, we further propose two optical effects to detect the unoccupied surface state. One is the polar Kerr effect in odd layer from nonvanishing ac Hall conductance $sigma_{xy}(omega)$, and the other is higher-order terahertz-sideband generation in even layer, where the non-vanishining Berry curvature of the unoccupied surface state is directly observed from the giant Faraday rotation of optical emission.
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