ﻻ يوجد ملخص باللغة العربية
Self-assembled topological structures of post-processed two-dimensional materials exhibit novel physical properties distinct from those of their parent materials. Herein, the critical role of desulphurization on self-assembled topological morphologies of molybdenum disulfide ($MoS_2$) monolayer sheets is explored using molecular dynamics (MD) simulations. MD results show that there are differences in atomic energetics of $MoS_2$ monolayer sheets with different desulphurization contents. Both free-standing and substrate-hosted $MoS_2$ monolayer sheets show diversity in topological structures such as flat surface, wrinkles, folds and scrolls, depending on the desulphurization contents, planar dimensions and ratios of length-to-width of $MoS_2$ monolayer sheets. Particularly, at the critical desulphurization contents, they roll up into nanotube morphology, consistent with previous experimental observations. Moreover, the observed differences in the molecular morphological diagrams between free-standing and substrate-hosted $MoS_2$ monolayer sheets can be attributed to unique interatomic interactions and van der Waals interactions in them. The study provides important insights into functionalizing structural morphological properties of two-dimensional materials, e.g., $MoS_2$, via defect engineering.
The doping and strain effects on the electron transport of monolayer MoS_2 are systematically investigated using the first-principles calculations with Boltzmann transport theory. We estimate the mobility has a maximum 275 cm^2/(Vs) in the low doping
We investigate the electronic structure of the InAs/InP quantum dots using an atomistic pseudopotential method and compare them to those of the InAs/GaAs QDs. We show that even though the InAs/InP and InAs/GaAs dots have the same dot material, their
Epitaxial self-assembled quantum dots (SAQDs) are of interest for nanostructured optoelectronic and electronic devices such as lasers, photodetectors and nanoscale logic. Spatial order and size order of SAQDs are important to the development of usabl
Epitaxial self-assembled quantum dots (SAQDs) represent an important step in the advancement of semiconductor fabrication at the nanoscale that will allow breakthroughs in electronics and optoelectronics. In these applications, order is a key factor.
Molybdenum disulfide (MoS2) is layered transition-metal dichalcogenide (TMDC), which in its monolayer form, has the direct bandgap of 1.8 eV. We investigated the effect of width and strain on quantum transport for MoS2 armchair nanoribbons. That indi