اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدStructural disorder-driven topological phase transition in noncentrosymmetric BiTeI
104
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
We investigate the possibility of using structural disorder to induce a topological phase in a solid state system. Using first-principles calculations, we introduce structural disorder in the trivial insulator BiTeI and observe the emergence of a topological insulating phase. By modifying the bonding environments, the crystal-field splitting is enhanced and the spin-orbit interaction produces a band inversion in the bulk electronic structure. Analysis of the Wannier charge centers and the surface electronic structure reveals a strong topological insulator with Dirac surface states. Finally, we propose a prescription for inducing topological states from disorder in crystalline materials. Understanding how local environments produce topological phases is a key step for predicting disordered and amorphous topological materials.
قيم البحث
اقرأ أيضاً
Topological insulators (TI) are a phase of matter that host unusual metallic states on their surfaces. Unlike the states that exist on the surface of conventional materials, these so-called topological surfaces states (TSS) are protected against diso
rder-related localization effects by time reversal symmetry through strong spin-orbit coupling. By combining transport measurements, angle-resolved photo-emission spectroscopy and scanning tunneling microscopy, we show that there exists a critical level of disorder beyond which the TI Bi2Se3 loses its ability to protect the metallic TSS and transitions to a fully insulating state. The absence of the metallic surface channels dictates that there is a change in topological character, implying that disorder can lead to a topological phase transition even without breaking the time reversal symmetry. This observation challenges the conventional notion of topologically-protected surface states, and will provoke new studies as to the fundamental nature of topological phase of matter in the presence of disorder.
Recent progress in understanding the electronic band topology and emergent topological properties encourage us to reconsider the band structure of well-known materials including elemental substances. Controlling such a band topology by external field
is of particular interest from both fundamental and technological view point. Here we report the pressure-induced topological phase transition from a semiconductor to a Weyl semimetal in elemental tellurium probed by transport measurements. Pressure variation of the periods of Shubnikov-de Haas oscillations, as well as oscillations phases, shows an anomaly around the pressure theoretically predicted for topological phase transition. This behavior can be well understood by the pressure-induced band deformation and resultant band crossing effect. Moreover, effective cyclotron mass is reduced toward the critical pressure, potentially reflecting the emergence of massless linear dispersion. The present result paves the way for studying the electronic band topology in well-known compounds and topological phase transition by the external field.
Intrinsic magnetic topological insulators provide an ideal platform to achieve various exciting physical phenomena. However, this kind of materials and related research are still very rare. In this work, we reported the electronic and structural phas
e transitions in intrinsic magnetic topological insulator MnSb2Te4 driven by hydrostatic pressure. Electric transport results revealed that temperature dependent resistance showed a minimum value near short-range antiferromagnetic (AFM) ordering temperature TN, the TN values decline with pressure, and the AFM ordering was strongly suppressed near 10 GPa and was not visible above 11.5 GPa. The intensity of three Raman vibration modes in MnSb2Te4 declined quickly starting from 7.5 GPa and these modes become undetectable above 9 GPa, suggesting possible insulator-metal transition, which is further confirmed by theoretical calculation. In situ x-ray diffraction (XRD) demonstrated that an extra diffraction peak appears near 9.1 GPa and MnSb2Te4 started to enter an amorphous-like state above 16.6 GPa, suggesting the structural origin of suppressed AFM ordering and metallization. This work has demonstrated the correlation among interlayer interaction, magnetic ordering, and electric behavior, which could be benefit for the understanding of the fundamental properties of this kind of materials and devices.
A topological phase transition from a trivial insulator to a $mathbb{Z}_2$ topological insulator requires the bulk band gap to vanish. In the case of noncentrosymmetric materials, these phases are separated by a gapless Weyl semimetal phase. However,
at finite temperature, the gap is affected by atomic motion, through electron-phonon interaction, and by thermal expansion of the lattice. As a consequence, the phase space of topologically nontrivial phases is affected by temperature. In this paper, the pressure and temperature dependence of the indirect band gap of BiTeI is investigated from first principles. We evaluate the contribution from both electron-phonon interaction and thermal expansion, and show that their combined effect drives the topological phase transition towards higher pressures with increasing temperature. Notably, we find that the sensitivity of both band extrema to pressure and topology for electron-phonon interaction differs significantly according to their leading orbital character. Our results indicate that the Weyl semimetal phase width is increased by temperature, having almost doubled by 100 K when compared to the static lattice results. Our findings thus provide a guideline for experimental detection of the nontrivial phases of BiTeI and illustrate how the phase space of the Weyl semimetal phase in noncentrosymmetric materials can be significantly affected by temperature.
In recent experiments, time-dependent periodic fields are used to create exotic topological phases of matter with potential applications ranging from quantum transport to quantum computing. These nonequilibrium states, at high driving frequencies, ex
hibit the quintessential robustness against local disorder similar to equilibrium topological phases. However, proving the existence of such topological phases in a general setting is an open problem. We propose a universal effective theory that leverages on modern free probability theory and ideas in random matrices to analytically predict the existence of the topological phase for finite driving frequencies and across a range of disorder. We find that, depending on the strength of disorder, such systems may be topological or trivial and that there is a transition between the two. In particular, the theory predicts the critical point for the transition between the two phases and provides the critical exponents. We corroborate our results by comparing them to exact diagonalizations for driven-disordered 1D Kitaev chain and 2D Bernevig-Hughes-Zhang models and find excellent agreement. This Letter may guide the experimental efforts for exploring topological phases.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
