اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدPressure-driven electronic and structural phase transition in intrinsic magnetic topological insulator MnSb2Te4
109
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
Intrinsic magnetic topological insulators provide an ideal platform to achieve various exciting physical phenomena. However, this kind of materials and related research are still very rare. In this work, we reported the electronic and structural phase transitions in intrinsic magnetic topological insulator MnSb2Te4 driven by hydrostatic pressure. Electric transport results revealed that temperature dependent resistance showed a minimum value near short-range antiferromagnetic (AFM) ordering temperature TN, the TN values decline with pressure, and the AFM ordering was strongly suppressed near 10 GPa and was not visible above 11.5 GPa. The intensity of three Raman vibration modes in MnSb2Te4 declined quickly starting from 7.5 GPa and these modes become undetectable above 9 GPa, suggesting possible insulator-metal transition, which is further confirmed by theoretical calculation. In situ x-ray diffraction (XRD) demonstrated that an extra diffraction peak appears near 9.1 GPa and MnSb2Te4 started to enter an amorphous-like state above 16.6 GPa, suggesting the structural origin of suppressed AFM ordering and metallization. This work has demonstrated the correlation among interlayer interaction, magnetic ordering, and electric behavior, which could be benefit for the understanding of the fundamental properties of this kind of materials and devices.
قيم البحث
اقرأ أيضاً
Based on the first-principles calculations and theoretical analysis, we investigate the electronic structures, topological phase transition (TPT) and topological properties of layered magnetic compound MnSb2Te4. It has the similar crystal and magneti
c structure as the magnetic topological insulator MnBi2Te4. We find that when the spin-orbit coupling (SOC) is considered, the band structure of MnSb2Te4 in antiferromagnetic (AFM) state has no band inversion at {Gamma}. This is due to the SOC strength of Sb is less than that of Bi. The band inversion can be realized by increasing the SOC of Sb by 0.3 times, which drives MnSb2Te4 from a trivial AFM insulator to an AFM topological insulator (TI) or axion insulator. Uniaxial compressive strain along the layer stacking direction is another way to control the band inversion. The interlayer distance shorten by 5% is needed to drive the similar TPT. For the ferromagnetic (FM) MnSb2Te4 with experimental crystal structure, it is a normal FM insulator. The band inversion can happen when SOC is enhanced by 0.1 times or the interlayer distance is decreased by more than 1%. Thus, FM MnSb2Te4 can be tuned to be the simplest type-I Weyl semimetal with only one pair of Weyl nodes on the three-fold rotational axis. These two Weyl nodes are projected onto (1-10) surface with one Fermi arc connecting them.
We investigate the possibility of using structural disorder to induce a topological phase in a solid state system. Using first-principles calculations, we introduce structural disorder in the trivial insulator BiTeI and observe the emergence of a top
ological insulating phase. By modifying the bonding environments, the crystal-field splitting is enhanced and the spin-orbit interaction produces a band inversion in the bulk electronic structure. Analysis of the Wannier charge centers and the surface electronic structure reveals a strong topological insulator with Dirac surface states. Finally, we propose a prescription for inducing topological states from disorder in crystalline materials. Understanding how local environments produce topological phases is a key step for predicting disordered and amorphous topological materials.
The electronic structure, Fermi surface and elastic properties of the iso-structural and iso-electronic LaSn$_3$ and YSn$_3$ intermetallic compounds are studied under pressure within the framework of density functional theory including spin-orbit cou
pling. The LaSn$_3$ Fermi surface consists of two sheets, of which the second is very complex. Under pressure a third sheet appears around compression $V/V_0=0.94$, while a small topology change in the second sheet is seen at compression $V/V_0=0.90$. This may be in accordance with the anomalous behaviour in the superconducting transition temperature observed in LaSn$_3$, which has been suggested to reflect a Fermi surface topological transition, along with a non-monotonic pressure dependence of the density of states at the Fermi level. The same behavior is not observed in YSn$_3$, the Fermi surface of which already includes three sheets at ambient conditions, and the topology remains unchanged under pressure. The reason for the difference in behaviour between LaSn$_3$ and YSn$_3$ is the role of spin-orbit coupling and the hybridization of La - $4f$ states with the Sn - $p$ states in the vicinity of the Fermi level, which is well explained using the band structure calculation. The elastic constants and related mechanical properties are calculated at ambient as well as at elevated pressures. The elastic constants increase with pressure for both compounds and satisfy the conditions for mechanical stability under pressure.
Recently, natural van der Waals heterostructures of (MnBi2Te4)m(Bi2Te3)n have been theoretically predicted and experimentally shown to host tunable magnetic properties and topologically nontrivial surface states. In this work, we systematically inves
tigate both the structural and electronic responses of MnBi2Te4 and MnBi4Te7 to external pressure. In addition to the suppression of antiferromagnetic order, MnBi2Te4 is found to undergo a metal-semiconductor-metal transition upon compression. The resistivity of MnBi4Te7 changes dramatically under high pressure and a non-monotonic evolution of r{ho}(T) is observed. The nontrivial topology is proved to persists before the structural phase transition observed in the high-pressure regime. We find that the bulk and surface states respond differently to pressure, which is consistent with the non-monotonic change of the resistivity. Interestingly, a pressure-induced amorphous state is observed in MnBi2Te4, while two high pressure phase transitions are revealed in MnBi4Te7. Our combined theoretical and experimental research establishes MnBi2Te4 and MnBi4Te7 as highly tunable magnetic topological insulators, in which phase transitions and new ground states emerge upon compression.
We study lanthanum mononitride LaN by first-principles calculations. The commonly reported rock-salt structure of $Fmbar{3}m$ symmetry for rare-earth monopnictides is found dynamically unstable for LaN at zero temperature. Using density functional th
eory and evolutionary crystal prediction, we discover a new, dynamically stable structure with $P1$ symmetry at 0 K. This $P1$-LaN exhibits spontaneous electric polarization. Our ab initio molecular dynamics simulations of finite-temperature phonon spectra further suggest that LaN will undergo ferroelectric and structural transitions from $P1$ to $Fmbar{3}m$ symmetry, when temperature is increased. Moreover, $P1$-LaN will transform to a tetragonal structure with $P4/nmm$ symmetry at a critical pressure $P=18$ GPa at 0 K. Electronic structures computed with an advanced hybrid functional show that the high-temperature rock-salt LaN can change from a trivial insulator to a strong topological insulator at $P sim 14$ GPa. Together, our results indicate that when $P=14 - 18$ GPa, LaN can show simultaneous temperature-induced structural, ferroelectric, and topological transitions. Lanthanum monopnictides thereby provide a rich playground for exploring novel phases and phase transitions driven by temperature and pressure.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
