ﻻ يوجد ملخص باللغة العربية
Indium selenide (InSe), as a novel van der Waals layered semiconductor, has attracted a large research interest thanks to its excellent optical and electrical properties in the ultra-thin limit. Here, we discuss four different optical methods to quantitatively identify the thickness of thin InSe flakes on various substrates, such as SiO2/Si or transparent polymeric substrates. In the case of thin InSe deposited on a transparent substrate, the transmittance of the flake in the blue region of the visible spectrum can be used to estimate the thickness. For InSe supported by SiO2/Si, the thickness of the flakes can be estimated either by assessing their apparent colors or accurately analyzed using a Fresnel-law based fitting model of the optical contrast spectra. Finally, we also studied the thickness dependency of the InSe photoluminescence emission energy, which provides an additional tool to estimate the InSe thickness and it works both for InSe deposited on SiO2/Si and on a transparent polymeric substrate.
Two-dimensional (2D) materials and their heterostructures, with wafer-scale synthesis methods and fascinating properties, have attracted numerous interest and triggered revolutions of corresponding device applications. However, facile methods to real
Considering that two-dimensional (2D) molybdenum trioxide has acquired more attention in the last few years, it is relevant to speed up thickness identification of this material. We provide two fast and non-destructive methods to evaluate the thickne
We have implemented three different optical methods to quantitatively assess the thickness of thin GaSe flakes transferred on both transparent substrates, like Gel-Film, or SiO2/Si substrates. We show how their apparent color can be an efficient way
Recent advances in high-throughput experimentation for combinatorial studies have accelerated the discovery and analysis of materials across a wide range of compositions and synthesis conditions. However, many of the more powerful characterization me
Nanocrystalline n-AlN:Er thin films were deposited on (001) Silicon substrates by r. f. magnetron sputtering at room temperature to study the correlation between 1.54 $mu$m IR photoluminescence (PL) intensity, AlN crystalline structure and Er concent