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We study a generic model of a Chern insulator supplemented by a Hubbard interaction in arbitrary even dimension $D$ and demonstrate that the model remains well-defined and nontrivial in the $D to infty$ limit. Dynamical mean-field theory is applicable and predicts a phase diagram with a continuum of topologically different phases separating a correlated Mott insulator from the trivial band insulator. We discuss various features, such as the elusive distinction between insulating and semi-metal states, which are unconventional already in the non-interacting case. Topological phases are characterized by a non-quantized Chern density replacing the Chern number as $Dto infty$.
Detailed understanding of the role of single dopant atoms in host materials has been crucial for the continuing miniaturization in the semiconductor industry as local charging and trapping of electrons can completely change the behaviour of a device.
Bounds on the exchange-correlation energy of many-electron systems are derived and tested. By using universal scaling properties of the electron-electron interaction, we obtain the exponent of the bounds in three, two, one, and quasi-one dimensions.
We develop a theory for manipulating the effective band structure of interacting helical edge states realized on the boundary of two-dimensional time-reversal symmetric topological insulators. For sufficiently strong interaction, an interacting edge
We study the transport properties of the Kondo insulator SmB$_6$ with a specialized configuration designed to distinguish bulk-dominated conduction from surface-dominated conduction. We find that as the material is cooled below 4 K, it exhibits a cro
Bulk and surface state contributions to the electrical resistance of single-crystal samples of the topological Kondo insulator compound SmB6 are investigated as a function of crystal thickness and surface charge density, the latter tuned by ionic liq