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تسجيل مستخدم جديدTuning bulk and surface conduction in topological Kondo insulator SmB6
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Bulk and surface state contributions to the electrical resistance of single-crystal samples of the topological Kondo insulator compound SmB6 are investigated as a function of crystal thickness and surface charge density, the latter tuned by ionic liquid gating with electrodes patterned in a Corbino disk geometry on a single surface. By separately tuning bulk and surface conduction channels, we show conclusive evidence for a model with an insulating bulk and metallic surface states, with a crossover temperature that depends solely on the relative contributions of each conduction channel. The surface conductance, on the order of 100 e^2/h and electron-like, exhibits a field-effect mobility of 133 cm^2/V/s and a large carrier density of ~2x10^{14}/cm^2, in good agreement with recent photoemission results. With the ability to gate-modulate surface conduction by more than 25%, this approach provides promise for both fundamental and applied studies of gate-tuned devices structured on bulk crystal samples.
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SmB6 is a strongly correlated mixed-valence Kondo insulator with a newly discovered surface state, proposed to be of non-trivial topological origin. However, the surface state dominates electrical conduction only below T* ~ 4 K limiting its scientifi
c investigation and device application. Here, we report the enhancement of T * in SmB6 under the application of tensile strain. With 0.7% tensile strain we report surface dominated conduction at up to a temperature of 240 K, persisting even after the strain has been removed. This can be explained in the framework of strain-tuned temporal and spatial fluctuations of f-electron configurations, which might be generally applied to other mixed-valence materials. We note that this amount of strain can be indued in epitaxial SmB6 films via substrate in potential device applications.
We study the transport properties of the Kondo insulator SmB$_6$ with a specialized configuration designed to distinguish bulk-dominated conduction from surface-dominated conduction. We find that as the material is cooled below 4 K, it exhibits a cro
ssover from bulk to surface conduction with a fully insulating bulk. We take the robustness and magnitude of the surface conductivity, as is manifest in the literature of SmB$_6$, to be strong evidence for the topological insulator metallic surface states recently predicted for this material.
Temperature dependence of the electronic structure of SmB6 is studied by high-resolution ARPES down to 1 K. We demonstrate that there is no essential difference for the dispersions of the surface states below and above the resistivity saturating anom
aly (~ 3.5 K). Quantitative analyses of the surface states indicate that the quasi-particle scattering rate increases linearly as a function of temperature and binding energy, which differs from Fermi-Liquid behavior. Most intriguingly, we observe that the hybridization between the d and f states builds gradually over a wide temperature region (30 K < T < 110 K). The surface states appear when the hybridization starts to develop. Our detailed temperature-dependence results give a complete interpretation of the exotic resistivity result of SmB6, as well as the discrepancies among experimental results concerning the temperature regions in which the topological surface states emerge and the Kondo gap opens, and give new insights into the exotic Kondo crossover and its relationship with the topological surface states in the topological Kondo insulator SmB6.
Since its discovery as a Kondo insulator 50 years ago, SmB6 recently received a revival of interest due to detection of unexpected quantum oscillations in the insulating state, discovery of disorder-immune bulk transport, and proposals of correlation
-driven topological physics. While recent transport results attribute the anomalous low temperature conduction to two-dimensional surface states, important alternatives, such as conduction channel residing in one-dimensional dislocation lines, have not been adequately explored. Here we study SmB6 with scanning microwave impedance microscopy and uncover evidence for conducting one-dimensional states terminating at surface step edges. These states remain conducting up to room temperature, indicating unusual robustness against scattering and an unconventional origin. Our results bring to light a heretofore undetected conduction route in SmB6 that contributes to the low temperature transport. The unique scenario of intrinsic one-dimensional conducting channels in a highly insulating correlated bulk offers a one-dimensional platform that may host exotic physics.
The concept of a topological Kondo insulator (TKI) has been brought forward as a new class of topological insulators in which non-trivial surface states reside in the bulk Kondo band gap at low temperature due to the strong spin-orbit coupling [1-3].
In contrast to other three-dimensional (3D) topological insulators (e.g. Bi2Se3), a TKI is truly insulating in the bulk [4]. Furthermore, strong electron correlations are present in the system, which may interact with the novel topological phase. Applying spin- and angle-resolved photoemission spectroscopy (SARPES) to the Kondo insulator SmB6, a promising TKI candidate, we reveal that the surface states of SmB6 are spin polarized, and the spin is locked to the crystal momentum. Counter-propagating states (i.e. at k and -k) have opposite spin polarizations protected by time-reversal symmetry. Together with the odd number of Fermi surfaces of surface states between the 4 time-reversal invariant momenta in the surface Brillouin zone [5], these findings prove, for the first time, that SmB6 can host non-trivial topological surface states in a full insulating gap in the bulk stemming from the Kondo effect. Hence our experimental results establish that SmB6 is the first realization of a 3D TKI. It can also serve as an ideal platform for the systematic study of the interplay between novel topological quantum states with emergent effects and competing order induced by strongly correlated electrons.
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