ﻻ يوجد ملخص باللغة العربية
Hybrid plasmonic nanoemitters based on the combination of quantum dot emitters (QD) and plasmonic nanoantennas open up new perspectives in the control of light. However, precise positioning of any active medium at the nanoscale constitutes a challenge. Here, we report on the optimal overlap of antennas near-field and active medium whose spatial distribution is controlled via a plasmon-triggered 2-photon polymerization of a photosensitive formulation containing QDs. Au nanoparticles of various geometries are considered. The response of these hybrid nano-emitters is shown to be highly sensitive to the light polarization. Different light emission states are evidenced by photoluminescence measurements. These states correspond to polarization-sensitive nanoscale overlap between the exciting local field and the active medium distribution. The decrease of the QD concentration within the monomer formulation allows trapping of a single quantum dot in the vicinity of the Au particle. The latter objects show polarization-dependent switching in the single-photon regime.
On-chip realization of complex photonic functionalities is essential for further progress in planar integrated nanophotonics, especially when involving nonclassical light sources such as quantum emitters (QEs). Hybrid plasmonic nanocircuits integrate
Deterministically integrating single solid-state quantum emitters with photonic nanostructures serves as a key enabling resource in the context of photonic quantum technology. Due to the random spatial location of many widely-used solid-state quantum
Acoustic-graphene-plasmons (AGPs) are highly confined electromagnetic modes, carrying large momentum and low loss in the mid-infrared/Terahertz spectra. Owing to their ability to confine light to extremely small dimensions, they bear great potential
Deep subwavelength integration of high-definition plasmonic nanostructures is of key importance for the development of future optical nanocircuitry for high-speed communication, quantum computation and lab-on-a-chip applications. So far the experimen
Hexagonal boron nitride (h-BN), a prevalent insulating crystal for dielectric and encapsulation layers in two-dimensional (2D) nanoelectronics and a structural material in 2D nanoelectromechanical systems (NEMS), has also rapidly emerged as a promisi