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It is prohibitively expensive to deposit customized dielectric coatings on individual optics. One solution is to batch-coat many optics with extra dielectric layers, then remove layers from individual optics as needed. Here we present a low-cost, single-step, monitored wet etch technique for reliably removing (or partially removing) individual SiO$_2$ and Ta$_2$O$_5$ dielectric layers, in this case from a high-reflectivity fiber mirror. By immersing in acid and monitoring off-band reflected light, we show it is straightforward to iteratively (or continuously) remove six bilayers. At each stage, we characterize the coating performance with a Fabry-P{e}rot cavity, observing the expected stepwise decrease in finesse from 92,000$pm$3,000 to 3,950$pm$50, finding no evidence of added optical losses. The etch also removes the fibers sidewall coating after a single bilayer, and, after six bilayers, confines the remaining coating to a $sim$50-$mu$m-diameter pedestal at the center of the fiber tip. Vapor etching above the solution produces a tapered pool cue cladding profile, reducing the fiber diameter (nominally 125 $mu$m) to $sim$100 $mu$m at an angle of $sim$0.3$^circ$ near the tip. Finally, we note that the data generated by this technique provides a sensitive estimate of the layers optical depths. This technique could be readily adapted to free-space optics and other coatings.
Nanophotonic structures in single--crystal diamond (SCD) that simultaneously confine and co-localize photons and phonons are highly desirable for applications in quantum information science and optomechanics. Here we describe an optimized process for
The layers of a high-temperature novel GaAs:Fe diluted magnetic semiconductor (DMS) with an average Fe content up to 20 at. % were grown on (001) i-GaAs substrates using a pulsed laser deposition in a vacuum. The transmission electron microscopy (TEM
Optical pump-probe spectroscopy is a powerful tool for the study of non-equilibrium electronic dynamics and finds wide applications across a range of fields, from physics and chemistry to material science and biology. However, a shortcoming of conven
This work studies the effect of four different types of buffer layers on the structural and optical properties of InGaN layers grown on Si(111) substrates and their correlation with electrical characteristics. The vertical electrical conduction of n-
Structural, electronic, vibrational and dielectric properties of LaBGeO$_5$ with the stillwellite structure are determined based on textit{ab initio} density functional theory. The theoretically relaxed structure is found to agree well with the exist