ترغب بنشر مسار تعليمي؟ اضغط هنا

Quantum turnstile regime of nanoelectromechanical systems

114   0   0.0 ( 0 )
 نشر من قبل Valeriu Moldoveanu
 تاريخ النشر 2020
  مجال البحث فيزياء
والبحث باللغة English




اسأل ChatGPT حول البحث

The effects of a turnstile operation on the current-induced vibron dynamics in nanoelectromechanical systems (NEMS) are analyzed in the framework of the generalized master equation. In our simulations each turnstile cycle allows the pumping of up to two interacting electrons across a biased mesoscopic subsystem which is electrostatically coupled to the vibrational mode of a nanoresonator. The time-dependent mean vibron number is very sensitive to the turnstile driving, rapidly increasing/decreasing along the charging/discharging sequences. This sequence of heating and cooling cycles experienced by the nanoresonator is due to specific vibron-assisted sequential tunneling processes along a turnstile period. At the end of each charging/discharging cycle the nanoresonator is described by a linear combination of vibron-dressed states $s_{ u}$ associated to an electronic configuration $ u$. If the turnstile operation leads to complete electronic depletion the nanoresonator returns to its equilibrium position, i.e.,its displacement vanishes. It turns out that a suitable bias applied on the NEMS leads to a slow but complete cooling at the end of the turnstile cycle. Our calculations show that the quantum turnstile regime switches the dynamics of the NEMS between vibron-dressed subspaces with different electronic occupation numbers. We predict that the turnstile control of the electron-vibron interaction induces measurable changes on the input and output transient currents.



قيم البحث

اقرأ أيضاً

The experimental observation of quantum phenomena in mechanical degrees of freedom is difficult, as the systems become linear towards low energies and the quantum limit, and thus reside in the correspondence limit. Here we investigate how to access q uantum phenomena in flexural nanomechanical systems which are strongly deflected by a voltage. Near a metastable point, one can achieve a significant nonlinearity in the electromechanical potential at the scale of zero point energy. The system could then escape from the metastable state via macroscopic quantum tunneling (MQT). We consider two model systems suspended atop a voltage gate, namely, a graphene sheet, and a carbon nanotube. We find that the experimental demonstration of the phenomenon is currently possible but demanding, since the MQT crossover temperatures fall in the milli-Kelvin range. A carbon nanotube is suggested as the most promising system.
We theoretically study the interplay between electrical and mechanical properties of suspended, doubly clamped carbon nanotubes in which charging effects dominate. In this geometry, the capacitance between the nanotube and the gate(s) depends on the distance between them. This dependence modifies the usual Coulomb models and we show that it needs to be incorporated to capture the physics of the problem correctly. We find that the tube position changes in discrete steps every time an electron tunnels onto it. Edges of Coulomb diamonds acquire a (small) curvature. We also show that bistability in the tube position occurs and that tunneling of an electron onto the tube drastically modifies the quantized eigenmodes of the tube. Experimental verification of these predictions is possible in suspended tubes of sub-micron length.
We report on the realization of a single-electron source, where current is transported through a single-level quantum dot (Q), tunnel-coupled to two superconducting leads (S). When driven with an ac gate voltage, the experiment demonstrates electron turnstile operation. Compared to the more conventional superconductor - normal metal - superconductor turnstile, our SQS device presents a number of novel properties, including higher immunity to the unavoidable presence of non-equilibrium quasiparticles in superconducting leads. In addition, we demonstrate its ability to deliver electrons with a very narrow energy distribution.
The time-dependent transport through single-molecule magnets coupled to magnetic or non-magnetic electrodes is studied in the framework of the generalized master equation method. We investigate the transient regime induced by the periodic switching o f the source and drain contacts. If the electrodes have opposite magnetizations the quantum turnstile operation allows the stepwise writing of intermediate excited states. In turn, the transient currents provide a way to read these states. Within our approach we take into account both the uniaxial and transverse anisotropy. The latter may induce additional quantum tunneling processes which affect the efficiency of the proposed read-and-write scheme. An equally weighted mixture of molecular spin states can be prepared if one of the electrodes is ferromagnetic.
We perform a theoretical study of non-equilibrium effects in charge transport through a hybrid single-electron transistor based on a small normal metal (N) island with the gate-controlled number of electrons, tunnel-coupled to voltage-biased supercon ducting (S) electrodes (SINIS). Focusing on the turnstile mode of the transistor operation with the gate voltage driven periodically, and electrons on the island being out of equilibrium, we find that the current quantization accuracy is a non-monotonic function of the relaxation rate $Gamma_{mathcal{F}}$ of the distribution function $mathcal{F}(epsilon)$ on the island due to tunneling, as compared to the drive frequency $f$, electron-electron $1/tau_{ee}$ and electron-phonon $1/tau_{eph}$ relaxation rates. Surprisingly, in the strongly non-equilibrium regime, $fgg Gamma_{mathcal{F}}ggtau_{ee}^{-1},tau_{eph}^{-1}$, the turnstile current plateau is recovered, similarly to the ideal equilibrium regime, $tau_{eph}^{-1}gg Gamma_{mathcal{F}}$. The plateau is destroyed in the quasiequilibrium regime when the electron-electron relaxation is faster than tunneling.
التعليقات
جاري جلب التعليقات جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
mircosoft-partner

هل ترغب بارسال اشعارات عن اخر التحديثات في شمرا-اكاديميا