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Ion implantation is widely used as a surrogate for neutron irradiation in the investigation of radiation damage on the properties of materials. Due to the small depth of damage, micromechanical methods must be used to extract material properties. In this work, nanoindentation has been applied to ion irradiated silicon carbide to extract radiation-induced hardening. Residual stress is evaluated using HR-EBSD, AFM swelling measurements, and a novel microcantilever relaxation technique coupled with finite element modelling. Large compressive residual stresses of several GPa are found in the irradiated material, which contribute to the significant hardening observed in nanoindentation measurements. The origin of these residual stresses and the associated hardening is the unirradiated substrate which constrains radiation swelling. Comparisons with other materials susceptible to irradiation swelling show that this effect should not be neglected in studying the effects of ion irradiation damage on mechanical properties. This constraint may also be influencing fundamental radiation defects. This has significant implications for the suitability of ion implantation as a surrogate for neutron irradiations. These results demonstrate the significance of swelling-induced residual stresses in nuclear reactor components, and the impact on structural integrity of reactor components.
We present experimental results and numerical Finite Element analysis to describe surface swelling due to the creation of buried graphite-like inclusions in diamond substrates subjected to MeV ion implantation. Numerical predictions are compared to e
In recent years, graphene growth optimization has been one of the key routes towards large-scale, high-quality graphene production. We have measured in-situ residual gas content during epitaxial graphene growth on silicon carbide (SiC) to find detrim
Knowledge of mechanical and physical property evolution due to irradiation damage is essential for the development of future fission and fusion reactors. Ion-irradiation provides an excellent proxy for studying irradiation damage, allowing high damag
The electrical behavior of Ni Schottky barrier formed onto heavily doped (ND>1019 cm-3) n-type phosphorous implanted silicon carbide (4H-SiC) was investigated, with a focus on the current transport mechanisms in both forward and reverse bias. The for
The surface properties of metallic implants play an important role in their clinical success. Improving upon the inherent shortcomings of Ti implants, such as poor bioactivity, is imperative for achieving clinical use. In this study, we have develope