اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدHybrid integration methods for on-chip quantum photonics
322
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
The goal of integrated quantum photonics is to combine components for the generation, manipulation, and detection of non-classical light in a phase stable and efficient platform. Solid-state quantum emitters have recently reached outstanding performance as single photon sources. In parallel, photonic integrated circuits have been advanced to the point that thousands of components can be controlled on a chip with high efficiency and phase stability. Consequently, researchers are now beginning to combine these leading quantum emitters and photonic integrated circuit platforms to realize the best properties of each technology. In this article, we review recent advances in integrated quantum photonics based on such hybrid systems. Although hybrid integration solves many limitations of individual platforms, it also introduces new challenges that arise from interfacing different materials. We review various issues in solid-state quantum emitters and photonic integrated circuits, the hybrid integration techniques that bridge these two systems, and methods for chip-based manipulation of photons and emitters. Finally, we discuss the remaining challenges and future prospects of on-chip quantum photonics with integrated quantum emitters.
قيم البحث
اقرأ أيضاً
By harnessing quantum superposition and entanglement, remarkable progress has sprouted over the past three decades from different areas of research in communication computation and simulation. To further improve the processing ability of microwave ph
o-tonics, here, we have demonstrated a quantum microwave photonic processing system using a low jitter superconducting nanowire single photon detector (SNSPD) and a time-correlated single-photon counting (TCSPC) module. This method uniquely combines extreme optical sensitivity, down to a single-photon level (below -100 dBm), and wide processing bandwidth, twice higher than the transmission bandwidth of the cable. Moreover, benefitted from the trigger, the system can selectively process the desired RF signal and attenuates the other in-tense noise and undesired RF components even the power is 15dB greater than the desired signal power. Using this method we show microwave phase shifting and frequency filtering for the desired RF signal on the single-photon level. Besides its applications in space and under-water communications and testing and qualification of pre-packaged photonic modulators and detectors. This RF signal processing capability at the single-photon level can lead to significant development in the high-speed quantum processing method.
Integrated nonlinear photonic circuits received rapid development in recent years, providing all-optical functionalities enabled by cavity-enhanced photon-photon interaction for classical and quantum applications. A high-efficiency fiber-to-chip inte
rface is key to the use of these integrated photonic circuits for quantum information tasks, as photon loss is a major source that weakens quantum protocols. Here, overcoming material and fabrication limitation of thin-film aluminum nitride by adopting a stepwise waveguiding scheme, we demonstrate low-loss adiabatic fiber-optic couplers in aluminum nitride films with a substantial thickness (600 nm) for optimized nonlinear photon interaction. For telecom (1550 nm) and near-visible (780 nm) transverse magnetic-polarized light, the measured insertion loss of the fiber-optic coupler is -0.97 dB and -2.6 dB, respectively. Our results will facilitate the use of aluminum nitride integrated photonic circuits as efficient quantum resources for generation of entangled photons and squeezed light on microchips.
Integrated optical isolators have been a longstanding challenge for photonic integrated circuits (PIC). An ideal integrated optical isolator for PIC should be made by a monolithic process, have a small footprint, exhibit broadband and polarization-di
verse operation, and be compatible with multiple materials platforms. Despite significant progress, the optical isolators reported so far do not meet all these requirements. In this article we present monolithically integrated broadband magneto-optical isolators on silicon and silicon nitride (SiN) platforms operating for both TE and TM modes with record high performances, fulfilling all the essential characteristics for PIC applications. In particular, we demonstrate fully-TE broadband isolators by depositing high quality magneto-optical garnet thin films on the sidewalls of Si and SiN waveguides, a critical result for applications in TE-polarized on-chip lasers and amplifiers. This work demonstrates monolithic integration of high performance optical isolators on chip for polarization-diverse silicon photonic systems, enabling new pathways to impart nonreciprocal photonic functionality to a variety of integrated photonic devices.
Quantum photonics plays a crucial role in the development of novel communication and sensing technologies. Color centers hosted in silicon carbide and diamond offer single photon emission and long coherence spins that can be scalably implemented in q
uantum networks. We develop systems that integrate these color centers with photonic devices that modify their emission properties through electromagnetically tailored light and matter interaction.
Microwave frequency acousto-optic modulation is realized by exciting high overtone bulk acoustic wave resonances (HBAR resonances) in the photonic stack. These confined mechanical stress waves transmit exhibit vertically transmitting, high quality fa
ctor (Q) acoustic Fabry Perot resonances that extend into the Gigahertz domain, and offer stress-optical interaction with the optical modes of the microresonator. Although HBAR are ubiquitously used in modern communication, and often exploited in superconducting circuits, this is the first time they have been incorporated on a photonic circuit based chip. The electro-acousto-optical interaction observed within the optical modes exhibits high actuation linearity, low actuation power and negligible crosstalk. Using the electro-acousto-optic interaction, fast optical resonance tuning is achieved with sub-nanosecond transduction time. By removing the silicon backreflection, broadband acoustic modulation at 4.1 and 8.7 GHz is realized with a 3 dB bandwidth of 250 MHz each. The novel hybrid HBAR nanophotonic platform demonstrated here, allowing on chip integration of micron-scale acoustic and photonic resonators, can find immediate applications in tunable microwave photonics, high bandwidth soliton microcomb stabilization, compact opto-electronic oscillators, and in microwave to optical conversion schemes. Moreover the hybrid platform allows implementation of momentum biasing, which allows realization of on chip non-reciprocal devices such as isolators or circulators and topological photonic bandstructures.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
