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The possibility of tailoring the critical strain of 2D materials will be crucial for the fabrication of flexible devices. In this paper, the fracture in polycrystalline MoS2 films with two different grain orientations is studied at the micro- and nanoscale using electron microscopy. The critical uniaxial strain is determined to be approximately 5% and independent of the sample morphology. However, electron beam irradiation is found to enhance the interaction between the MoS2 and the PDMS substrates, leading to an increased critical strain that can exceed 10%. This enhancement of strain resistance was used to fabricate a mechanically robust array of lines 1 mm in length. Finally, nanoscale crack propagation studied by transmission electron microscopy showed that cracks propagate along the grain boundaries as well as through the grains, preferentially along van der Waals bonding. These results provide insight regarding the fracture of polycrystalline 2D materials and a new method to tailor the critical strain and nanofabrication of ultra-thin MoS2 devices using well-developed tools, which will be of great interest to the flexible electronics industry.
The advancement of nanoscale electronics has been limited by energy dissipation challenges for over a decade. Such limitations could be particularly severe for two-dimensional (2D) semiconductors integrated with flexible substrates or multi-layered p
In-plane optical anisotropy has been detected from monolayer MoS$_2$ grown on a-plane (11-20) sapphire substrate in the ultraviolet-visible wavelength range. Based on the measured optical anisotropy, the energy differences between the optical transit
Strain engineering has arisen as a powerful technique to tune the electronic and optical properties of two-dimensional semiconductors like molybdenum disulfide (MoS2). Although several theoretical works predicted that biaxial strain would be more eff
Monolayer molybdenum disulfide (MoS$_2$) nanosheets, obtained via chemical vapor deposition onto SiO$_2$/Si substrates, are exploited to fabricate field-effect transistors with n-type conduction, high on/off ratio, steep subthreshold slope and good m
We fabricate large-area atomically thin MoS$_2$ layers through the direct transformation of crystalline molybdenum MoS$_2$ (MoO$_3$) by sulfurization at relatively low temperatures. The obtained MoS2 sheets are polycrystalline (~10-20 nm single-cryst