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Topological insulators are bulk semiconductors that manifest in-gap massless Dirac surface states due to the topological bulk-boundary correspondence principle [1-3]. These surface states have been a subject of tremendous ongoing interest, due both to their intrinsic properties and to higher order emergence phenomena that can be achieved by manipulating the interface environment [4-11]. Here, angle resolved photoemission (ARPES) spectromicroscopy and supplementary scanning tunneling microscopy (STM) are performed on the model topological insulator Bi2Se3 to investigate the interplay of crystallographic inhomogeneity with the topologically ordered bulk and surface band structure. Quantitative analysis methods are developed to obtain key spectroscopic information in spite of a limited dwell time on each measured point. Band energies are found to vary on the scale of 50 meV across the sample surface, enabling single-sample measurements that are analogous to a multi-sample doping series (termed a binning series). Focusing separately on the surface and bulk electrons reveals a nontrivial hybridization-like interplay between fluctuations in the surface and bulk state energetics.
We reanalyze some of the critical transport experiments and provide a coherent understanding of the current generation of topological insulators (TIs). Currently TI transport studies abound with widely varying claims of the surface and bulk states, o
The protected surface conductivity of topological insulators, carried by ultra-relativistic Dirac fermions, is in high demand for the next generation of electronic devices. Progress in the unambiguous identification of this surface contribution and,
We investigate the properties of a single substitutional Mn impurity and its associated acceptor state on the (111) surface of Bi$_2$Se$_3$ topological insulator. Combining ab initio calculations with microscopic tight-binding modeling, we identify t
Bulk and surface state contributions to the electrical resistance of single-crystal samples of the topological Kondo insulator compound SmB6 are investigated as a function of crystal thickness and surface charge density, the latter tuned by ionic liq
The absorption of heavily doped graphene in the terahertz (THz) and mid-infrared (MIR) spectral regions is considered taking into account both the elastic scattering due to finite-range disorder and the variations of concentration due to long-range d