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We study the role of the onset of Shockley states, $D_s$, belonging to (111) surfaces of Cu, Ag and Au in the Kondo effect when a magnetic impurity is deposited on them. When $D_s$ approaches to the Fermi level, $E_F$, thing that can be done by compressing (stretching) the metallic sample, we found that most of the thermodynamic and dynamic properties of the impurity are affected in a non trivial way. We model the system by a generic Anderson impurity model and solve it by using the numerical renormalization group, NRG, technique. In particular, the impurity contribution to magnetic susceptibility and entropy as a function of temperature exhibit negative values and goes to zero slowly in a logarithmic shape. Furthermore, we found a suppression of the spectral density weight at the Fermi level when $D_ssim E_F$ even in the Kondo regime. As a consequence, the conductance through the impurity is strongly reduced by near $25%$ of the unitary value $2e^2/h$. Finally, we analyze these features in realistic systems like Co on Ag(111) reported in the literature.
The (111) surface of Cu, Ag and Au is characterized by a band of surface Shockley states, with constant density of states beginning slightly below the Fermi energy. These states as well as bulk states hybridize with magnetic impurities which can be p
The Kondo lattice model is a paradigmatic model for the description of local moment systems, a class of materials exhibiting a range of strongly correlated phenomena including heavy fermion formation, magnetism, quantum criticality and unconventional
The Kondo zero bias anomaly of Co adatoms probed by scanning tunneling microscopy is known to depend on the height of the tip above the surface, and this dependence is different on different low index Cu surfaces. On the (100) surface, the Kondo temp
We examine the exchange Hamiltonian for magnetic adatoms in graphene with localized inner shell states. On symmetry grounds, we predict the existence of a class of orbitals that lead to a distinct class of quantum critical points in graphene, where t
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