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تسجيل مستخدم جديدDiscovery of new boron-rich chalcogenides: orthorhombic B6X (X = S, Se)
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New boron-rich sulfide B6S and selenide B6Se have been discovered from high pressure - high temperature synthesis combined with ab initio evolutionary crystal structure prediction, and studied by synchrotron X-ray diffraction and Raman spectroscopy at ambient conditions. As it follows from Rietveld refinement of powder X-ray diffraction data, both chalcogenides have orthorhombic symmetry and belongs to Pmna space group. All experimentally observed Raman bands have been attributed to the theoretically calculated phonon modes, and the mode assignment has been performed. Prediction of mechanical properties (hardness and elastic moduli) of new boron-rich chalcogenides have been made using ab initio routines, and both compounds were found to be members of a family of hard phases (Hv ~ 31 GPa).
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Boron rich chalcogenides have been predicted to have excellent properties for optical and mechanical applications in recent times. In this regard, we report the electronic, optical and mechanical properties of recently synthesized boron rich chalcoge
nide compounds, B12X (X = S and Se) using density functional theory for the first time. The effects of exchange and correlation functional on these properties are also investigated. The consistency of the obtained crystal structure with the reported experimental results has been checked in terms of lattice parameters. The considered materials are mechanically stable, brittle and elastically anisotropic. Furthermore, the elastic moduli and hardness parameters are calculated, which show that B12S is likely to be a prominent member of hard materials family compared to B12Se. The origin of different in hardness is explained on the basis of density of states near the Fermi level. Reasonably good values of fracture toughness and machinability index for B12X (X= S and Se) are reported. The melting point, Tm for the B12S and B12Se compounds suggests that both solids are stable, at least up to 4208 and 3577 K, respectively. Indirect band gap of B12S (2.27 eV) and B12Se (1.30 eV) are obtained using the HSE06 functional.The electrons of B12Se compound show lighter average effective mass compared to that of B12S compound, which signifies higher mobility of charge carriers in B12Se. The optical properties are characterized using GGA-PBE and HSE06 method and discussed in detail. These compounds possess bulk optical anisotropy and excellent absorption coefficients in visible light region along with very low static value of reflectivity spectra (range: 7.42-14.0% using both functionals) are noted. Such useful features of the compounds under investigation show promise for applications in optoelectronic and mechanical sectors.
In the present study, the structural and hitherto uninvestigated mechanical (elastic stiffness constants, machinability index, Cauchy pressure, anisotropy indices, brittleness/ductility, Poissons ratio), electronic, optical, and thermodynamic propert
ies of novel boron-rich compounds B6X (X = S, Se) have been explored using density functional theory. The estimated structural lattice parameters were consistent with the prior report. The mechanical and dynamical stability of these compounds have been established theoretically. The materials are brittle in nature and elastically anisotropic. The value of fracture toughness, KIC for the B6S and B6Se are ~ 2.07 MPam0.5, evaluating the resistance to limit the crack propagation inside the materials. Both B6S and B6Se compounds possess high hardness values in the range 31-35 GPa, and have the potential to be prominent members of the class of hard compounds. Strong covalent bonding and sharp peak at low energy below the Fermi level confirmed by partial density of states (PDOS) resulted in the high hardness. The profile of band structure, as well as DOS, assesses the indirect semiconducting nature of the titled compounds. The comparatively high value of Debye temperature ({Theta}D), minimum thermal conductivity (Kmin), lattice thermal conductivity (kph), low thermal expansion coefficient, and low density suggest that both boron-rich chalcogenides might be used as thermal management materials. Large absorption capacities in the mid ultraviolet region (3.2-15 eV) of the studied materials and low reflectivity (~16 %) are significantly noted. Such favorable features give promise to the compounds under investigation to be used in UV surface-disinfection devices as well as medical sterilizer equipment applications. Excellent correlations are found among all the studied physical properties of these compounds.
Understanding the nature of chemical bonding in solids is crucial to comprehend the physical and chemical properties of a given compound. To explore changes in chemical bonding in lead chalcogenides (PbX, where X = Te, Se, S, O), a combination of pro
perty-, bond breaking- and quantum-mechanical bonding descriptors have been applied. The outcome of our explorations reveals an electron transfer driven transition from metavalent bonding in PbX (X = Te, Se, S) to iono-covalent bonding in beta-PbO. Metavalent bonding is characterized by adjacent atoms being held together by sharing about a single electron and small electron transfer (ET). The transition from metavalent to iono-covalent bonding manifests itself in clear changes in these quantum-mechanical descriptors (ES and ET), as well as in property-based descriptors (i.e. Born effective charge, dielectric function, effective coordination number (ECON) and mode-specific Grueneisen parameter, and in bond breaking descriptors (PME). Metavalent bonding collapses, if significant charge localization occurs at the ion cores (ET) and/or in the interatomic region (ES). Predominantly changing the degree of electron transfer opens possibilities to tailor materials properties such as the chemical bond and electronic polarizability, optical band gap and optical interband transitions characterized by the imaginary part of the dielectric function. Hence, the insights gained from this study highlight the technological relevance of the concept of metavalent bonding and its potential for materials design.
Boron bulk crystals are marked by exceptional structural complexity and unusual related physical phenomena. Recent reports of hydrogenated $alpha$-tetragonal and a new $delta$-orthorhombic boron B$_{52}$ phase have raised many fundamental questions.
Using density functional theory calculations it is shown that hydrogenated $alpha$-tetragonal boron has at least two stable stoichiometric compositions, B$_{51}$H$_{7}$ and B$_{51}$H$_{3}$. Thermodynamic modeling was used to qualitatively reproduce the two-step phase transition reported by Ekimov et al. [J. Mater. Res. 31, 2773 (2016)] upon annealing, which corresponds to successive transitions from B$_{51}$H$_{7}$ to B$_{51}$H$_{3}$ to pure B$_{52}$. The so obtained $delta$-orthorhombic boron is an ordered, low-temperature phase and $alpha$-tetragonal boron is a disordered, high-temperature phase of B$_{52}$. The two phases are connected by an order-disorder transition, that is associated with the migration of interstitial boron atoms. Atom migration is usually suppressed in strongly bound, covalent crystals. It is shown that the migration of boron atoms is likely to be assisted by the migration of hydrogen atoms upon annealing. These results are in excellent agreement with the above mentioned experiment and they represent an important step forward for the understanding of boron and hydrogenated boron crystals. They further open a new avenue to control or remove the intrinsic defects of covalently bound crystals by utilizing volatile, foreign atoms.
The compression of SH$_2$ and its subsequent decomposition to SH$_3$, presumably in a cubic Im$overline{3}$m structure, has lead to the discovery of conventional superconductivity with the highest measured and confirmed $T_c$ to date, 203 K at 160 GP
a. Recent theoretical studies suggest that a mixture of S with other elements of the chalcogen group could improve the superconducting temperature. Here, we present a detailed analysis of the thermodynamic properties of S and Se mixtures in the bcc lattice with Im$overline{3}$m symmetry using a cluster expansion technique to explore the phase diagram of S$_x$Se$_{1-x}$H$_{3}$. In contrast to earlier reports, we find that S$_{0.5}$Se$_{0.5}$H$_3$ is not stable in the pressure range between 150-200 GPa. However, phases at compositions S$_{0.2}$Se$_{0.8}$H$_3$, S$_{0.overline{3}}$Se$_{0.overline{6}}$H$_3$, and S$_{0.6}$Se$_{0.4}$H$_3$ are stable at 200 GPa, while additional phases at S$_{0.25}$Se$_{0.75}$H$_3$ and S$_{0.75}$Se$_{0.25}$H$_3$ are accessible at lower pressures. Electron-phonon calculations show that the values of $T_c$ are consistently lower for all ternary phases, indicating that mixtures of S and Se with H might not be a viable route towards compounds with improved superconducting properties.
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