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Powered by the mutual developments in instrumentation, materials andtheoretical descriptions, sensing and imaging capabilities of quantum emitters insolids have significantly increased in the past two decades. Quantum emitters insolids, whose properties resemble those of atoms and ions, provide alternative waysto probing natural and artificial nanoscopic systems with minimum disturbance andultimate spatial resolution. Among those emerging quantum emitters, the nitrogen-vacancy (NV) color center in diamond is an outstanding example due to its intrinsicproperties at room temperature (highly-luminescent, photo-stable, biocompatible,highly-coherent spin states). This review article summarizes recent advances andachievements in using NV centers within nano- and single crystal diamonds in sensingand imaging. We also highlight prevalent challenges and material aspects for differenttypes of diamond and outline the main parameters to consider when using color centersas sensors. As a novel sensing resource, we highlight the properties of NV centersas light emitting electrical dipoles and their coupling to other nanoscale dipoles e.g.graphene.
Individual, luminescent point defects in solids so called color centers are atomic-sized quantum systems enabling sensing and imaging with nanoscale spatial resolution. In this overview, we introduce nanoscale sensing based on individual nitrogen vac
Quantum sensors based on optically active defects in diamond such as the nitrogen vacancy (NV) centre represent a promising platform for nanoscale sensing and imaging of magnetic, electric, temperature and strain fields. Enhancing the optical interfa
Diamond nitrogen-vacancy (NV) center magnetometry has recently received considerable interest from researchers in the fields of applied physics and sensors. The purpose of this review is to analyze the principle, sensitivity, technical development po
Many promising applications of single crystal diamond and its color centers as sensor platform and in photonics require free-standing membranes with a thickness ranging from several micrometers to the few 100 nm range. In this work, we present an app
We characterize single nitrogen-vacancy (NV) centers created by 10-keV N+ ion implantation into diamond via thin SiO$_2$ layers working as screening masks. Despite the relatively high acceleration energy compared with standard ones (< 5 keV) used to