ترغب بنشر مسار تعليمي؟ اضغط هنا

Quantum-statistical transport phenomena in memristive computing architectures

107   0   0.0 ( 0 )
 نشر من قبل Wei-Cheng Lee
 تاريخ النشر 2019
  مجال البحث فيزياء
والبحث باللغة English




اسأل ChatGPT حول البحث

The advent of reliable, nanoscale memristive components is promising for next generation compute-in-memory paradigms, however, the intrinsic variability in these devices has prevented widespread adoption. Here we show coherent electron wave functions play a pivotal role in the nanoscale transport properties of these emerging, non-volatile memories. By characterizing both filamentary and non-filamentary memristive devices as disordered Anderson systems, the switching characteristics and intrinsic variability arise directly from the universality of electron transport in disordered media. Our framework suggests localization phenomena in nanoscale, solid-state memristive systems are directly linked to circuit level performance. We discuss how quantum conductance fluctuations in the active layer set a lower bound on device variability. This finding implies there is a fundamental quantum limit on the reliability of memristive devices, and electron coherence will play a decisive role in surpassing or maintaining Moores Law with these systems.



قيم البحث

اقرأ أيضاً

351 - K. Takase , S. Tanabe , S. Sasaki 2012
We demonstrate experimentally that graphene quantum capacitance $C_{mathrm{q}}$ can have a strong impact on transport spectroscopy through the interplay with nearby charge reservoirs. The effect is elucidated in a field-effect-gated epitaxial graphen e device, in which interface states serve as charge reservoirs. The Fermi-level dependence of $C_{mathrm{q}}$ is manifested as an unusual parabolic gate voltage ($V_{mathrm{g}}$) dependence of the carrier density, centered on the Dirac point. Consequently, in high magnetic fields $B$, the spectroscopy of longitudinal resistance ($R_{xx}$) vs. $V_{mathrm{g}}$ represents the structure of the unequally spaced relativistic graphene Landau levels (LLs). $R_{xx}$ mapping vs. $V_{mathrm{g}}$ and $B$ thus reveals the vital role of the zero-energy LL on the development of the anomalously wide $ u=2$ quantum Hall state.
We report measurements of disordered graphene probed by both a high electric field and a high magnetic field. By apply a high source-drain voltage Vsd, we are able to study the current-voltage relation I-Vsd of our device. With increasing Vsd, a cros sover from the linear I-Vsd regime to the non-linear one, and eventually to activationless-hopping transport occurs. In the activationless-hopping regime, the importance of Coulomb interactions between charged carriers is demonstrated. Moreover, we show that delocalization of carriers which are strongly localized at low T and at small Vsd occurs with the presence of high electric field and perpendicular magnetic field..
We study the quantum criticality of the phase transition between the Dirac semimetal and the excitonic insulator in two dimensions. Even though the system has a semimetallic ground state, there are observable effects of excitonic pairing at finite te mperatures and/or finite energies, provided that the system is in proximity to the excitonic insulating transition. To determine the quantum critical behavior, we consider three potentially important interactions, including the Yukawa coupling between Dirac fermions and the excitonic order parameter fluctuation, the long-range Coulomb interaction, and the disorder scattering. We employ the renormalization group technique to study how these interactions affect quantum criticality and also how they influence each other. We first investigate the Yukawa coupling in the clean limit, and show that it gives rise to typical non-Fermi liquid behavior. Adding random scalar potential to the system always turns such a non-Fermi liquid into a compressible diffusive metal. In comparison, the non-Fermi liquid behavior is further enhanced by random vector potential, but is nearly unaffected by random mass. Incorporating the Coulomb interaction may change the results qualitatively. In particular, the non-Fermi liquid state is protected by the Coulomb interaction for weak random scalar potential, and it becomes a diffusive metal only when random scalar potential becomes sufficiently strong. When random vector potential or random mass coexists with Yukawa coupling and Coulomb interaction, the system is a stable non-Fermi liquid state, with fermion velocities flowing to constants in the former case and being singularly renormalized in the latter case. These quantum critical phenomena can be probed by measuring observable quantities.
Charge and thermal conductivities are the most important parameters of carbon nanomaterials as candidates for future electronics. In this paper we address the effects of Anderson type disorder in long semiconductor carbon nanotubes (CNTs) to electron charge conductivity and lattice thermal conductivity using the atomistic Green function approach. The electron and phonon transmissions are analyzed as a function of the length of the disordered nanostructures. The thermal conductance as a function of temperature is calculated for different lengths. Analysis of the transmission probabilities as a function of length of the disordered device shows that both electrons and phonons with different energies display different transport regimes, i.e. quasi-ballistic, diffusive and localization regimes coexist. In the light of the results we discuss heating of the semiconductor device in electronic applications.
We have developed an efficient order-N real-space Kubo approach for the calculation of the phonon conductivity which outperforms state-of-the-art alternative implementations based on the Greens function formalism. The method treats efficiently the ti me-dependent propagation of phonon wave packets in real space, and this dynamics is related to the calculation of the thermal conductance. Without loss of generality, we validate the accuracy of the method by comparing the calculated phonon mean free paths in disordered carbon nanotubes (isotope impurities) with other approaches, and further illustrate its upscalability by exploring the thermal conductance features in large width edge-disordered graphene nanoribbons (up to ~20 nm), which is out of the reach of more conventional techniques. We show that edge-disorder is the most important scattering mechanism for phonons in graphene nanoribbons with realistic sizes and thermal conductance can be reduced by a factor of ~10.
التعليقات
جاري جلب التعليقات جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
mircosoft-partner

هل ترغب بارسال اشعارات عن اخر التحديثات في شمرا-اكاديميا