اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدSuperconducting single-layer T-graphene and novel synthesis routes
64
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
Single-layer superconductors are ideal materials for fabricating superconducting nano devices. However, up to date, very few single-layer elemental superconductors have been predicted and especially no one has been successfully synthesized yet. Here, using crystal structure search techniques and ab initio calculations, we predict that a single-layer planar carbon sheet with 4- and 8-membered rings called T-graphene is a new intrinsic elemental superconductor with superconducting critical temperature (Tc) up to around 20.8 K. More importantly, we propose a synthesis route to obtain such a single-layer T-graphene, that is, a T-graphene potassium intercalation compound (C4K with P4/mmm symmetry) is firstly synthesized at high pressure (>11.5GPa) and then quenched to ambient condition; and finally, the single-layer T-graphene can be either exfoliated using the electrochemical method from the bulk C4K, or peeled off from bulk T-graphite C4, where C4 can be obtained from C4K by evaporating the K atoms. Interestingly, we find that the calculated Tc of C4K is about 30.4K at 0GPa, which sets a new record for layered carbon-based superconductors. The present findings add a new class of carbon based superconductors. In particular, once the single-layer T-graphene is synthesized, it can pave the way for fabricating superconducting devices together with other 2D materials using the layer-by-layer growth techniques.
قيم البحث
اقرأ أيضاً
Recent theory has demonstrated that the value of the electron-phonon coupling strength $lambda$ can be extracted directly from the thermal attenuation (Debye-Waller factor) of Helium atom scattering reflectivity. This theory is here extended to multi
valley semimetal systems and applied to the case of graphene on different metal substrates and graphite. It is shown that $lambda$ rapidly increases for decreasing graphene-substrate binding strength. Two different calculational models are considered which produce qualitatively similar results for the dependence of $lambda$ on binding strength. These models predict, respectively, values of $lambda_{HAS} = 0.89$ and 0.32 for a hypothetical flat free-standing single-layer graphene with cyclic boundary conditions. The method is suitable for analysis and characterization of not only the graphene overlayers considered here, but also other layered systems such as twisted graphene bilayers.
VS2 is a challenging material to prepare stoichiometrically in the bulk, and the single layer has not been successfully isolated before now. Here we report the first realization of single-layer VS2, which we have prepared epitaxially with high qualit
y on Au(111) in the octahedral (1T) structure. We find that we can deplete the VS2 lattice of S by annealing in vacuum so as to create an entirely new two-dimensional compound that has no bulk analogue. The transition is reversible upon annealing in an H2S gas atmosphere. We report the structural properties of both the stoichiometric and S-depleted compounds on the basis of low-energy electron diffraction, X-ray photoelectron spectroscopy and diffraction, and scanning tunneling microscopy experiments.
High-kinetic energy impacts between inorganic surfaces and molecular beams seeded by organics represent a fundamental case study in materials science, most notably when they activate chemical-physical processes leading to nanocrystals growth. Here we
demonstrate single-layer graphene synthesis on copper by C60 supersonic molecular beam (SuMBE) epitaxy at 645 {deg}C, with the possibility of further reduction. Using a variety of electron spectroscopy and microscopy techniques, and first-principles simulations, we describe the chemical-physical mechanisms activated by SuMBE resulting in graphene growth. In particular, we find a crucial role of high-kinetic energy deposition in enhancing the organic/inorganic interface interaction, to control the cage openings and to improve the growing film quality. These results, while discussed in the specific case of graphene on copper, are potentially extendable to different metallic or semiconductor substrates and where lower processing temperature is desirable.
We demonstrate anisotropic etching of single-layer graphene by thermally-activated nickel nanoparticles. Using this technique, we obtain sub-10nm nanoribbons and other graphene nanostructures with edges aligned along a single crystallographic directi
on. We observe a new catalytic channeling behavior, whereby etched cuts do not intersect, resulting in continuously connected geometries. Raman spectroscopy and electronic measurements show that the quality of the graphene is resilient under the etching conditions, indicating that this method may serve as a powerful technique to produce graphene nanocircuits with well-defined crystallographic edges.
We carried out micro-Raman spectroscopy of graphene layers over the temperature range from approximately 80 K to 370 K. The number of layers was independently confirmed by the quantum Hall measurements and atomic force microscopy. The measured values
of the temperature coefficients for the G and 2D-band frequencies of the single-layer graphene are -0.016 1/(cm K) and -0.034 1/(cm K), respectively. The G peak temperature coefficient of the bi-layer graphene and bulk graphite are -0.015 1/(cm K) and -0.011 1/(cm K), respectively.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
