ﻻ يوجد ملخص باللغة العربية
GTO-like thyristors 5STH-2045H0002 (4.5 kV, 18 kA/us) developed by ABB semiconductors are currently used at CERN in LHC Beam Dumping System (LBDS): high-power switches with high dI/dt capability and low turn-on delay time are required. Implementation of the impact-ionization triggering in GTO-like thyristor enhances its switching performance and gives new information about semiconductor physics. In this work thyristors of 5STH-2045H0002 type triggered in impact-ionization wave mode are investigated. An SOS generator providing a dV/dt of several kV/ns was used as a source of triggering pulses. A thyristor switching time of approximately 200-300 ps was observed. Maximum discharge parameters were obtained for two series connected thyristors at a charging voltage of 10 kV, and a capacitor stored energy of ~300 J: peak current of 43 kA, dI/dt of 120 kA/us (limited by the discharge circuit), FWHM of 1.5 us. A single thyristor was tested in the repetitive mode at the charging voltage of 4.2 kV, and the stored energy of 18 J: peak current of 5.5 kA, dI/dt of 40 kA/us, FWHM of 1.5 us were obtained. No thyristor degradation was observed after more than one million pulses at a PRF up to 1 kHz in burst mode. Thyristor recovery time was ~250 us. The switching efficiency was up to 98% depending on dV/dt and stored energy.
In this work a combination of an ionization chamber with one-dimensional spatial resolution and a MicroCAT structure will be presented. The combination between gas gain operations and integrating front-end electronics yields a dynamic range as high a
Two generations of a novel detector for high-resolution transmission imaging and spectrometry of fast-neutrons are presented. These devices are based on a hydrogenous fiber scintillator screen and single- or multiple-gated intensified camera systems
Ionization injection is attractive as a controllable injection scheme for generating high quality electron beams using plasma-based wakefield acceleration. Due to the phase dependent tunneling ionization rate and the trapping dynamics within a nonlin
Low Gain Avalanche Diodes (LGADs) are thin (20-50 $mu m$)silicon di ode sensors with modest internal gain (typically 5 to 50) and exceptional time resolution (17 $ps$ to 50 $ps$). However, the granularity of such devices is limited to the millimeter
Superconducting radio-frequency cavities are commonly used in modern particle accelerators for applied and fundamental research. Such cavities are typically made of high-purity, bulk Nb and are cooled by a liquid helium bath at a temperature of ~2 K.