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The role of electron-phonon scattering in finite-temperature anomalous Hall effect is still poorly understood. In this work, we present a Boltzmann theory for the side-jump contribution from electron-phonon scattering, which is derived from the microscopic quantum mechanical theory. We show that the resulting phonon side-jump conductivity generally approaches different limiting values in the high and low temperature limits, and hence can exhibit strong temperature dependence in the intermediate temperature regime. Our theory is amenable to ab initio treatment, which makes quantitative comparison between theoretical and experimental results possible.
Persistent confusion has existed between the intrinsic (Berry curvature) and the side jump mechanisms of anomalous Hall effect (AHE) in ferromagnets. We provide unambiguous identification of the side jump mechanism, in addition to the skew scattering
Exciton Valley Hall effect is the spatial separation of the valley-tagged excitons in the presence of a drag force. Usually, the effect is associated with the anomalous velocity acquired by the particles due to the Berry curvature of the Bloch bands.
A wide variation in the disorder strength, as inferred from an order of magnitude variation in the longitudinal resistivity of Co2FeSi (CFS) Huesler alloy thin films of fixed (50 nm) thickness, has been achieved by growing these films on Si(111) subs
The side-jump effect is a manifestation of the spin orbit interaction in electron scattering from an atom/ion/impurity. The effect has a broad interest because of its conceptual importance for generic spin-orbital physics, in particular the effect is
Doping a topological insulator (TI) film with transition metal ions can break its time-reversal symmetry and lead to the realization of the quantum anomalous Hall (QAH) effect. Prior studies have shown that the longitudinal resistance of the QAH samp