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The application of imaging techniques based on ensembles of nitrogen-vacancy (NV) sensors in diamond to characterise electrical devices has been proposed, but the compatibility of NV sensing with operational gated devices remains largely unexplored. Here we fabricate graphene field-effect transistors (GFETs) directly on the diamond surface and characterise them via NV microscopy. The current density within the gated graphene is reconstructed from NV magnetometry under both mostly p- and n-type doping, but the exact doping level is found to be affected by the measurements. Additionally, we observe a surprisingly large modulation of the electric field at the diamond surface under an applied gate potential, seen in NV photoluminescence and NV electrometry measurements, suggesting a complex electrostatic response of the oxide-graphene-diamond structure. Possible solutions to mitigate these effects are discussed.
Magnetic skyrmions are of considerable interest for low-power memory and logic devices because of high speed at low current and high stability due to topological protection. We propose a skyrmion field-effect transistor based on a gate-controlled Dzy
A study of the photophysical properties of nitrogen-vacancy (NV) color centers in diamond nanocrystals of size of 50~nm or below is carried out by means of second-order time-intensity photon correlation and cross-correlation measurements as a functio
Individual, luminescent point defects in solids so called color centers are atomic-sized quantum systems enabling sensing and imaging with nanoscale spatial resolution. In this overview, we introduce nanoscale sensing based on individual nitrogen vac
The electrical conductivity of a material can feature subtle, nontrivial, and spatially-varying signatures with critical insight into the materials underlying physics. Here we demonstrate a conductivity imaging technique based on the atom-sized nitro
The performance of field effect transistors based on an single graphene ribbon with a constriction and a single back gate are studied with the help of atomistic models. It is shown how this scheme, unlike that of traditional carbon-nanotube-based tra