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The phenomena of odd-parity magnetoresistance and the planar Hall effect are deeply entwined with ferromagnetism. The intrinsic magnetization of the ordered state permits these unusual and rarely observed manifestations of Onsagers theorem when time reversal symmetry is broken at zero applied field. Here we study two classes of ferromagnetic materials, rare-earth magnets with high intrinsic coercivity and antiferromagnetic pyrochlores with strongly-pinned ferromagnetic layers at domain walls, which both exhibit odd-parity magnetoresistive behavior. The peculiar angular variation of the response with respect to the relative alignments of the magnetization, magnetic field, and current reveal the two underlying microscopic mechanisms: spin-polarization-dependent scattering of a Zeeman-shifted Fermi surface and magnetoresistance driven by the anomalous velocity physics usually associated with the anomalous Hall effect.
A systematic study of the temperature and magnetic field dependence of the longitudinal and transverse resistivities of epitaxial thin films of magnetite (Fe3O4) is reported. The anisotropic magnetoresistance (AMR) and the planar Hall effect (PHE) ar
Charge-transfer effect under odd-parity crystalline electric field (CEF) is analyzed theoretically. In quantum-critical metal $beta$-YbAlB$_4$, seven-fold configuration of B atoms surrounding Yb atom breaks local inversion symmetry at the Yb site, gi
Anisotropic magnetoresistance is the change tendency of resistance of a material on the mutual orientation of the electric current and the external magnetic field. Here, we report experimental observations in the Dirac semimetal Cd3As2 of giant aniso
We systematically measured the Hall effect in the extremely large magnetoresistance semimetal WTe$_2$. By carefully fitting the Hall resistivity to a two-band model, the temperature dependencies of the carrier density and mobility for both electron-
We investigated the transport properties of the quasi one-dimensional organic metal (TMTSF)2ReO4 above the anion-ordering metal-insulator transition (T_{AO} approx 180K). The pronounced conductivity anisotropy, a small and smoothly temperature depend