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Giant anisotropic magnetoresistance and planar Hall effect in the Dirac semimetal Cd3As2

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 نشر من قبل Hui Li
 تاريخ النشر 2017
  مجال البحث فيزياء
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Anisotropic magnetoresistance is the change tendency of resistance of a material on the mutual orientation of the electric current and the external magnetic field. Here, we report experimental observations in the Dirac semimetal Cd3As2 of giant anisotropic magnetoresistance and its transverse version, called the planar Hall effect. The relative anisotropic magnetoresistance is negative and up to -68% at 2 K and 10 T. The high anisotropy and the minus sign in this isotropic and nonmagnetic material are attributed to a field-dependent current along the magnetic field, which may be induced by the Berry curvature of the band structure. This observation not only reveals unusual physical phenomena in Weyl and Dirac semimetals, but also finds additional transport signatures of Weyl and Dirac fermions other than negative magnetoresistance.

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Searching for exotic transport properties in new topological state of matters is an active topic. One of the most fascinating achievements is the chiral anomaly in recently discovered Weyl semimetals (WSMs), which is manifested as a negative longitud inal magnetoresistance (LMR) in the presence of a magnetic field B parallel to an electric field E. Another predicted key effect closely related to the chiral anomaly is the planar Hall effect (PHE), which has not been identified in WSMs so far. Here we carried out the planar Hall measurements on Cd3As2 nanoplates, and found that, accompanied by the large negative LMR, a PHE with non-zero transverse voltage can be developed while tilting the in-plane magnetic field B away from the electric field E. Further experiments reveal that both the PHE and the negative LMR can be suppressed synchronously by increasing the temperature, but still visible at room temperature, indicating the same origin of these two effects. The observation of PHE in Cd3As2 nanoplates gives another transport evidence for the chiral anomaly and provides a deep insight into the chiral charge pumping in Weyl Fermions system.
Dirac and Weyl semimetals display a host of novel properties. In Cd$_3$As$_2$, the Dirac nodes lead to a protection mechanism that strongly suppresses backscattering in zero magnetic field, resulting in ultrahigh mobility ($sim$ 10$^7$ cm$^2$ V$^{-1} $ s$^{-1}$). In applied magnetic field, an anomalous Nernst effect is predicted to arise from the Berry curvature associated with the Weyl nodes. We report observation of a large anomalous Nernst effect in Cd$_3$As$_2$. Both the anomalous Nernst signal and transport relaxation time $tau_{tr}$ begin to increase rapidly at $sim$ 50 K. This suggests a close relation between the protection mechanism and the anomalous Nernst effect. In a field, the quantum oscillations of bulk states display a beating effect, suggesting that the Dirac nodes split into Weyl states, allowing the Berry curvature to be observed as an anomalous Nernst effect.
109 - Hui Li , Hongtao He , Hai-Zhou Lu 2015
A large negative magnetoresistance is anticipated in topological semimetals in the parallel magnetic and electric field configuration as a consequence of the nontrivial topological properties. The negative magnetoresistance is believed to demonstrate the chiral anomaly, a long-sought high-energy physics effect, in solid-state systems. Recent experiments reveal that Cd3As2, a Dirac topological semimetal, has the record-high mobility and exhibits positive linear magnetoresistance in the orthogonal magnetic and electric field configuration. However, the negative magnetoresistance in the parallel magnetic and electric field configuration remains unveiled. Here, we report the observation of the negative magnetoresistance in Cd3As2 microribbons in the parallel magnetic and electric field configuration as large as 66% at 50 K and even visible at room temperatures. The observed negative magnetoresistance is sensitive to the angle between magnetic and electrical field, robust against temperature, and dependent on the carrier density. We have found that carrier densities of our Cd3As2 samples obey an Arrheniuss law, decreasing from 3.0x10^17 cm^-3 at 300 K to 2.2x10^16 cm^-3 below 50 K. The low carrier densities result in the large values of the negative magnetoresistance. We therefore attribute the observed negative magnetoresistance to the chiral anomaly. Furthermore, in the perpendicular magnetic and electric field configuration a positive non-saturating linear magnetoresistance up to 1670% at 14 T and 2 K is also observed. This work demonstrates potential applications of topological semimetals in magnetic devices.
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